Applied Physics A

, Volume 80, Issue 5, pp 1067–1070 | Cite as

Effect of built-in bias fields on the nanoscale switching in ferroelectric thin films

  • D. Fu
  • K. Suzuki
  • K. Kato
  • H. Suzuki


Polarization switching in Pb(Zr0.3Ti0.7)O3 thin films has been studied in nanoscale level using piezoresponse force microscopy. It is found that the switching in ferroelectric thin films is significantly influenced by the built-in bias field. It has two different origins: one time-independent, and the other time-dependent, which can be reasonably attributed to the effect of the film/electrode interface and the space charges, respectively. The redistribution of the unstable field can be triggered by a long pulse, and is shown to follow an exponential law.


Space Charge Remanent Polarization Ferroelectric Thin Film Switching Current Nanoscale Level 
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Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  1. 1.National Institute of Advanced Industrial Science and TechnologyNagoyaJapan
  2. 2.Department of Materials ScienceShizuoka UniversityHamamatsuJapan

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