Advertisement

Applied Physics A

, Volume 76, Issue 5, pp 791–800 | Cite as

N+BF2 and N+C+BF2 high-dose co-implantation in silicon

  • L. Barbadillo
  • M. Cervera
  • M.J. Hernández
  • P. Rodríguez
  • J. Piqueras
  • S.I. Molina
  • A. Ponce
  • F.M. Morales

Abstract.

Nitrogen and boron BF2, and nitrogen, carbon, and boron BF2 high-dose (6×1016–3×1017 cm-2) co-implantation were performed at energies of about 21–77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three and two surface layers respectively. The outer layer mainly consists of polycrystalline silicon and some amorphous material and Si3N4 inclusions. The inner layer is highly defective crystalline silicon, with some inclusions of Si3N4 too. In the N+B-implanted sample the intermediate layer is amorphous. Co-implantation of boron with nitrogen and with nitrogen and carbon prevents the excessive diffusivity of B and leads to a lattice-parameter reduction of 0.7–1.0%.

PACS: 81.05.Je; 81.20.-n; 52.75.Rx 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer-Verlag 2002

Authors and Affiliations

  • L. Barbadillo
    • 1
  • M. Cervera
    • 1
  • M.J. Hernández
    • 1
  • P. Rodríguez
    • 1
  • J. Piqueras
    • 1
  • S.I. Molina
    • 2
  • A. Ponce
    • 2
  • F.M. Morales
    • 2
  1. 1.Laboratorio de Microelectrónica, Facultad de Ciencias, Universidad Autónoma de Madrid, 28 049 Madrid, SpainES
  2. 2.Dpto. de Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Universidad de Cádiz, Apdo. 40, Puerto Real, 11 510 Cádiz, SpainES

Personalised recommendations