Polymer Bulletin

, Volume 48, Issue 2, pp 167–172 | Cite as

Structure-property relationships of hydrido organo siloxane polymer (HOSP)

  • Ann R. Fornof
  • Christy Tyberg
  • Jeffrey Hedrick
  • Kang-Wook Lee
  • Stephen Cohen

Summary

The structure and properties of Hydrido Organo Siloxane Polymer (HOSP) as a function of cure conditions have been analyzed. Fourier transform infrared spectroscopy, dielectric constant, and mechanical properties all indicated a dependence on the bake sequence of HOSP. FT-IR analysis indicated that the ratio of Si-O bonds in a caged (or ordered) configuration to Si-O bonds in a non-caged (or disordered) configuration changed as a function of both pre-cure hot plate bake conditions and cure temperature. The dielectric constant was lower for samples that received a high temperature hot plate bake (400°C) prior to the furnace cure independent of the furnace cure temperature, compared with samples that did not undergo the high temperature hot plate bake. In addition, adhesion was significantly improved with an increase in the cure temperature from 400°C to 430°C. These results indicate that both pre-cure hot plate bake conditions, and cure temperature affect the structure and therefore the properties of HOSP. Optimum properties are achieved when both the 400°C hot plate bake and a 430°C furnace cure are employed.

Keywords

Polymer Spectroscopy Mechanical Property Fourier Furnace 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • Ann R. Fornof
    • 1
  • Christy Tyberg
    • 2
  • Jeffrey Hedrick
    • 2
  • Kang-Wook Lee
    • 2
  • Stephen Cohen
    • 2
  1. 1.Virginia Tech, Department of Chemistry, Blacksburg, VA 24061-0212, USAUS
  2. 2.Thomas J. Watson Research Center, Kitchawan Road / Route 134, Yorktown Heights, NY 10598, USA, e-mail: tyberg@us.ibm.com, Fax: (914) 945-4033US

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