Zeitschrift für Physik B Condensed Matter

, Volume 100, Issue 4, pp 489–491

Realization of silicon quantum wires based on Si/SiGe/Si heterostructure

  • J. L. Liu
  • Y. Shi
  • F. Wang
  • Y. Lu
  • S. L. Gu
  • Y. D. Zheng
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DOI: 10.1007/s002570050151

Cite this article as:
Liu, J.L., Shi, Y., Wang, F. et al. Zeitschrift für Physik B Condensed Matter (1996) 100: 489. doi:10.1007/s002570050151
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Abstract

We report on the successful fabrication of silicon quantum wires with SiO2 boundaries on SiGe/Si heterostructures by combining Si/SiGe/Si heteroepitaxy, selective chemical etching, and subsequent thermal oxidation. The observational result of scanning electron microscope is demonstrated. The present method provides a well-controllable way to fabricate silicon quantum wires.

Copyright information

© Springer-Verlag 1996

Authors and Affiliations

  • J. L. Liu
    • 1
  • Y. Shi
    • 1
  • F. Wang
    • 1
  • Y. Lu
    • 1
  • S. L. Gu
    • 1
  • Y. D. Zheng
    • 1
  1. 1.Department of Physics and Institute of Solid State PhysicsNanjing UniversityNanjingPeople’s Republic of China

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