Heat and Mass Transfer

, Volume 45, Issue 10, pp 1323–1333 | Cite as

Numerical study of conjugate heat transfer in rectangular microchannel heat sink with Al2O3/H2O nanofluid

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Abstract

In the present paper, conjugate heat transfer approach has been used to numerically study laminar forced convective heat transfer characteristics of Al2O3/H2O nanofluid flowing in a silicon microchannel heat sink (MCHS) of rectangular cross-section using thermal dispersion model. Results are presented in terms of thermal resistance that characterizes MCHS performance. It is observed that use of nanofluid improves MCHS performance by reducing fin (conductive) thermal resistance.

Keywords

Thermal Resistance Effective Thermal Conductivity Nanoparticle Concentration Heat Transfer Coefficient Conjugate Heat Transfer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

List of symbols

C*

Constant, in Eq. 7

Cp

Specific heat (J/kg K)

dh

Hydraulic diameter (μm) (10−6 m)

D

Thermal dispersion coefficient (W/mK)

f

Skin friction coefficient

h

Heat transfer coefficient (HTC) (W/m2K)

k

Thermal conductivity (W/mK)

L

Length of MCHS (mm) (10−3 m)

Le

Entrance length (mm)

p

Pressure (Pa)

Δp

Pressure drop (kPa) (103 N/m2)

P

Perimeter of microchannel (μm)

Pe

Peclet number, Pe = d h v avg/(k/ρC p)nf

Pow

Pumping power (W)

q″

Heat flux (MW/m2)

Q

Dissipated power (W)

Re

Reynolds number, Re = d h v avg/(μ/ρ)nf

tb

Substrate thickness on heated side of MCHS (μm)

T

Temperature (K)

Ts

Substrate (wafer) temperature (K)

v

Velocity (m/s)

V

Volumetric flowrate (cc/s) (10−6 m3/s)

wch

Width of microchannel (μm)

wfin

Width of microchannel wall (fin) (μm)

W

Width of MCHS (mm)

3D

Three-dimensional

Greek symbols

α

Surface area multiplication factor

β

Ratio of nanolayer thickness to nanoparticle radius, in Eq. 5

ϕ

Volume fraction of nanoparticles

μ

Viscosity (kg/ms)

ρ

Density (kg/m3)

Ω

Computational domain

θ

Thermal resistance (K/W)

θcond

Thermal resistance due to substrate thickness on heated side of MCHS (K/W)

ψ

Synergy angle (degree)

Superscripts/subscripts

avg

Average

axial

Axial

bf

Base fluid

exit

Exit (outlet)

flow

Flow (convective)

fin

Fin/wall (conductive)

in

Inlet

max

Maximum

net

Overall

nf

Nanofluid

np

Nanoparticle

s

Substrate (solid silicon wafer)

wall

Wall

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Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • P. Bhattacharya
    • 1
  • A. N. Samanta
    • 1
  • S. Chakraborty
    • 1
  1. 1.Department of Chemical EngineeringIndian Institute of Technology KharagpurKharagpurIndia

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