Abstract
The influence of low energy ion bombardment on TiNx film growth and film properties was investigated. The discharge was characterized using Langmuir probe technique as well as energy resolved mass spectrometry with a plasma monitor (Hiden HAL 301 S/EQP). The deposited films were investigated by means of X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). Increasing the N2 gas flow as well as increasing the negative substrate voltage at constant gas flow effect an increase of the N/Ti ratio in the films determined by XPS. The influence of the energy flux to the surface due to ion bombardment was mainly recognized in the substructure of the films. In addition, pure Ti films were modified by nitrogen ion bombardment after deposition using an ion gun. An increase of the N/Ti ratio was observed with increasing ion energy. Finally saturation is reached.
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Received: 24 June 1996 / Revised: 21 November 1996 / Accepted: 28 November 1996
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Eggs, C., Wulff, H. & Hippler, R. Low energy ion bombardment of Ti and TiNx films. Fresenius J Anal Chem 358, 275–277 (1997). https://doi.org/10.1007/s002160050405
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DOI: https://doi.org/10.1007/s002160050405