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Fresenius' Journal of Analytical Chemistry

, Volume 367, Issue 4, pp 329–333 | Cite as

Photocurrent measurements for laterally resolved interface characterization

  • W. Moritz
  • I. Gerhardt
  • D. Roden
  • M. Xu
  • S. Krause
Special issue paper

Abstract

A miniaturized optical set-up based on a CD-ROM player optic was developed for LAPS (light addressable potentiometric sensors). A focus of 2.6 μm was achieved using this easy to handle device. The lateral resolution of LAPS measurements can be improved by using GaAs as the semiconductor material instead of Si. The diffusion length of the minority charge carriers was determined to be smaller than 3.1 μm. A new method called SPIM (scanning photo-induced impedance microscopy) is described. Using this technique, the impedance of thin films can be measured with lateral resolution.

Keywords

Microscopy Thin Film GaAs Charge Carrier Diffusion Length 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2000

Authors and Affiliations

  • W. Moritz
    • 1
  • I. Gerhardt
    • 1
  • D. Roden
    • 2
  • M. Xu
    • 2
  • S. Krause
    • 2
  1. 1.Walther Nernst Institute, Humboldt University Berlin, Bunsenstrasse 1, 10117 Berlin, GermanyDE
  2. 2.Department of Chemistry, University of Sheffield, Sheffield S3 7HF, UKGB

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