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Analytical and Bioanalytical Chemistry

, Volume 384, Issue 2, pp 366–373 | Cite as

Phthalocyanine-based field-effect transistors as gas sensors

  • Marcel Bouvet
Review

Abstract

In this review molecular field-effect transistors are described and compared with their gate-modified inorganic counterparts. The different processes involved in gas sensing are summarized. The advantages of transistors on resistors are demonstrated. The sensitivity of molecular field-effect transistors to strong oxidizing species, for example ozone, is detailed and compared with their sensitivity to humidity and volatile organic compounds. Application to ozone monitoring in urban atmospheres is also described.

Keywords

Molecular materials Phthalocyanine Field-effect transistor Sensor Ozone Nitrogen dioxide 

Abbreviations

FET

Field-effect transistor

Gate-modified FET

An FET with the gate modified by a molecular material which is exposed to a gas

IGFET

Insulated gate FET

Molecular FET

An FET in which the active material is a molecular semiconductor

MOSFET

Metal oxide semiconductor FET

Notes

Acknowledgements

The author is grateful to Professor Alain Pauly (Université Blaise Pascal, Clermont-Ferrand, France) for helpful discussions and to Dr Bernard Malézieux for reading the manuscript.

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Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  1. 1.Ecole Supérieure de Physique et de Chimie Industrielles (ESPCI)Paris cedex 05France
  2. 2.Laboratoire de Chimie Inorganique et Matériaux MoléculairesUniversité Pierre et Marie Curie, CNRS-UMR 7071Paris cedex 05France

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