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Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches

  • Zongwei XuEmail author
  • Lei Liu
  • Zhongdu He
  • Dongyu Tian
  • Alexander Hartmaier
  • Junjie Zhang
  • Xichun Luo
  • Mathias Rommel
  • Kai Nordlund
  • Guoxiong Zhang
  • Fengzhou Fang
ORIGINAL ARTICLE
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Abstract

Nanocutting mechanism of single crystal 6H-SiC is investigated through a novel scanning electron microscope setup in this paper. Various undeformed chip thicknesses on (0001) < 1–100 > orientation are adopted in the nanocutting experiments. Phase transformation and dislocation activities involved in the 6H-SiC nanocutting process are also characterized and analyzed. Two methods of stress-assisted and ion implant-assisted nanocutting are studied to improve 6H-SiC ductile machining ability. Results show that stress-assisted method can effectively decrease the hydrostatic stress and help to activate dislocation motion and ductile machining; ion implant-induced damages are helpful to improve the ductile machining ability from MD simulation and continuous nanocutting experiments under the online observation platform.

Keywords

Diamond turning Silicon carbide Phase transformation Surface integrity MD simulation Ion beam machining 

Abbreviations

SiC

silicon carbide

SEM

scanning electron microscope

EBSD

electron backscatter diffraction

FIB

focused ion beam

ABOP

analytical bond order potential

DXA

dislocation extraction algorithm

SRIM

Stopping and Range of Ions in Matter

MD

molecular dynamics

Notes

Acknowledgements

The authors thank Dr. B. Liu, Dr. H.S. Jiao, and Prof. C. Wang for valuable discussions.

Funding information

The study is supported by the National Natural Science Foundation of China (No. 51575389, 51761135106), National Key Research and Development Program of China (2016YFB1102203), State Key Laboratory of Precision Measuring Technology and Instruments (Pilt1705), and the “111” Project by the State Administration of Foreign Experts Affairs and the Ministry of Education of China (Grant No. B07014).

Supplementary material

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ESM 1 (GIF 17040 kb)

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Copyright information

© Springer-Verlag London Ltd., part of Springer Nature 2020

Authors and Affiliations

  • Zongwei Xu
    • 1
    Email author
  • Lei Liu
    • 1
  • Zhongdu He
    • 1
  • Dongyu Tian
    • 1
  • Alexander Hartmaier
    • 2
  • Junjie Zhang
    • 3
  • Xichun Luo
    • 4
  • Mathias Rommel
    • 5
  • Kai Nordlund
    • 6
  • Guoxiong Zhang
    • 1
  • Fengzhou Fang
    • 1
  1. 1.State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing TechnologyTianjin UniversityTianjinChina
  2. 2.Interdisciplinary Centre for Advanced Materials Simulation (ICAMS)Ruhr-University BochumBochumGermany
  3. 3.Center for Precision EngineeringHarbin Institute of TechnologyHarbinChina
  4. 4.Centre for Precision Manufacturing, Department of Design, Manufacture & Engineering ManagementUniversity of StrathclydeGlasgowUK
  5. 5.Fraunhofer Institute for Integrated Systems and Device Technology (IISB)ErlangenGermany
  6. 6.Department of Physics, Helsinki Institute of Physics POB 43University of HelsinkiHelsinkiFinland

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