Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches
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Nanocutting mechanism of single crystal 6H-SiC is investigated through a novel scanning electron microscope setup in this paper. Various undeformed chip thicknesses on (0001) < 1–100 > orientation are adopted in the nanocutting experiments. Phase transformation and dislocation activities involved in the 6H-SiC nanocutting process are also characterized and analyzed. Two methods of stress-assisted and ion implant-assisted nanocutting are studied to improve 6H-SiC ductile machining ability. Results show that stress-assisted method can effectively decrease the hydrostatic stress and help to activate dislocation motion and ductile machining; ion implant-induced damages are helpful to improve the ductile machining ability from MD simulation and continuous nanocutting experiments under the online observation platform.
KeywordsDiamond turning Silicon carbide Phase transformation Surface integrity MD simulation Ion beam machining
scanning electron microscope
electron backscatter diffraction
focused ion beam
analytical bond order potential
dislocation extraction algorithm
Stopping and Range of Ions in Matter
The authors thank Dr. B. Liu, Dr. H.S. Jiao, and Prof. C. Wang for valuable discussions.
The study is supported by the National Natural Science Foundation of China (No. 51575389, 51761135106), National Key Research and Development Program of China (2016YFB1102203), State Key Laboratory of Precision Measuring Technology and Instruments (Pilt1705), and the “111” Project by the State Administration of Foreign Experts Affairs and the Ministry of Education of China (Grant No. B07014).
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