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Study on diamond wire wear, surface quality, and subsurface damage during multi-wire slicing of c-plane sapphire wafer

  • Ajay Gupta
  • Chao-Chang A. Chen
  • Hsien-Wei Hsu
ORIGINAL ARTICLE
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Abstract

This paper aims on slicing of c-plane mono-crystalline aluminum oxide using reciprocating electroplated diamond wire in rocking mode sawing process. Effect of process parameters and wire characteristics on the surface morphology, surface roughness, and subsurface damage had been investigated. The machined wafer topography, wire wear, and subsurface damage are observed using scanning confocal microscopy (CCI), electron microscopy (SEM), and focused ion beam machining (FIB) respectively. Raman spectroscopy is used to observe the distribution of amorphous regions as a measure of dominant material removal mode. Results show that with reduced diamond size, higher wire speed, and uniform grit distribution, the wafer exhibits lower surface roughness and subsurface damage. The effect of wire speed is more pronounced than abrasive size and distribution density on surface quality. The wafers have shown lower roughness and greater evidence of ductile removal with increased wire wear. However, subsurface cracks are more and slightly deeper for wafers with increased wire wear. The wire characteristics in the form of abrasive size and distribution have dominant effect on subsurface damage. Wire wear analysis has shown that the pulled out diamond abrasive from the nickel bonding layer is the main reason for wire wear. Higher wire speed, lower ingot feed rate, and lower diamond grits size are suggested for lower subsurface damage.

Keywords

Diamond wire sawing Sapphire wafer Surface roughness Subsurface damage Wire wear 

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Notes

Funding information

This study received financial support from the Ministry of Science and Technology (MOST), Taiwan, under grant number MOST104-2221-E-011-104-MY3.

References

  1. 1.
    ITRPV (2014) International technology roadmap for photovoltaics, Report, pp 1–37Google Scholar
  2. 2.
    Chen CCA, Chao PH (2010) Surface texture analysis of fixed and free abrasive machining of silicon substrates for solar cells, Advanced Materials Research. pp 126-128, 177-180Google Scholar
  3. 3.
    Cao F, Chen K, Zhang J, Ye X, Li J, Zou S et al (2015) Next-generation multi-crystalline silicon solar cells: diamond-wire sawing, nano-texture and high efficiency. Sol Energy Mater Sol Cells 141:132–138CrossRefGoogle Scholar
  4. 4.
    Bidiville A, Heiber J, Wasmer K, Habegger S, Assi F (2010) Diamond wire wafering: wafer morphology in comparison to slurry sawn wafers. In: Proceedings of 25th European Photovoltaic Solar Energy Conference and Exhibition, pp 1673–1676Google Scholar
  5. 5.
    Gao YF, Ge PQ, Hou ZJ (2008)Google Scholar
  6. 6.
    Wang P, Ge P, Gao Y, Bi W (2017) Prediction of sawing force for single-crystal silicon carbide with fixed abrasive diamond wire saw. Mater Sci Semicond Process 63:25–32CrossRefGoogle Scholar
  7. 7.
    Kim H, Kim D, Kim C, Jeong H (2013) Multi-wire sawing of sapphire crystals with reciprocating motion of electroplated diamond wires. CIRP Ann 62:335–338CrossRefGoogle Scholar
  8. 8.
    Kim D, Kim H, Lee S, Jeong H (2015) Effect of initial deflection of diamond wire on thickness variation of sapphire wafer in multi-wire saw. International Journal of Precision Engineering and Manufacturing-Green Technology 2:117–121CrossRefGoogle Scholar
  9. 9.
    Wu H, Yang C, Melkote S (2016) Modeling and analysis of the grit level interaction in diamond wire sawing of silicon. The Int J Adv Manuf Technol 84:907–913Google Scholar
  10. 10.
    Chung C, Le VN (2015) Depth of cut per abrasive in fixed diamond wire sawing. The Int J Adv Manuf Technol 80:1337–1346CrossRefGoogle Scholar
  11. 11.
    Chung C, Nhat LV (2014) Generation of diamond wire sliced wafer surface based on the distribution of diamond grits. Int J Precis Eng Manuf 15:789–796CrossRefGoogle Scholar
  12. 12.
    Kim D, Kim H, Lee S, Lee T, Jeong H (2016) Characterization of diamond wire-cutting performance for lifetime estimation and process optimization. J Mech Sci Technol 30:847–852CrossRefGoogle Scholar
  13. 13.
    Kumar A, Kaminski S, Melkote SN, Arcona C (2016) Effect of wear of diamond wire on surface morphology, roughness and subsurface damage of silicon wafers, Wear, pp 364-365, 163-168Google Scholar
  14. 14.
    Gao Y, Ge P, Liu T (2016) Experiment study on electroplated diamond wire saw slicing single-crystal silicon. Mater Sci Semicond Process 56:106–114CrossRefGoogle Scholar
  15. 15.
    Cai E, Tang B, Fahrner WR, Zhou L (2011) Characterization of the surfaces generated by diamond cutting of crystalline silicon. In: Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition, pp 1884–1886Google Scholar
  16. 16.
    Zhang Z, Wang B, Kang R, Zhang B, Guo D (2015) Changes in surface layer of silicon wafers from diamond scratching. CIRP Ann 64:349–352CrossRefGoogle Scholar
  17. 17.
    Clark WI, Shih AJ, Hardin CW, Lemaster RL, McSpadden SB (2003) Fixed abrasive diamond wire machining—part i: process monitoring and wire tension force. Int J Mach Tools Manuf 43:523–532CrossRefGoogle Scholar
  18. 18.
    Sopori B, Basnyat P, Devayajanam S et al (2015) Analyses of diamond wire sawn wafers: effect of various cutting parameters. In: Proceeding of 42nd IEEE Photovoltaic Specialist Conference (PVSC), pp 1–6Google Scholar
  19. 19.
    Chen CC, Gupta A (2018) Modeling and analysis of wire motion during rocking mode diamond wire sawing of mono crystalline aluminium oxide wafer. Int J Adv Manuf Technol 95:3453–3463CrossRefGoogle Scholar
  20. 20.
    McGill R, Tukey JW, Larsen WA (1978) Variations of box plots. Am Statistician 32:12–16Google Scholar
  21. 21.
    Liu T, Ge P, Gao Y, Bi W (2016) Depth of cut for single abrasive and cutting force in resin bonded diamond wire sawing. TheInt J Adv Manuf Technol 88:1763–1773CrossRefGoogle Scholar
  22. 22.
    Kadleikova M, Breza J, Vesely M (2001) Raman spectra of synthetic sapphire. Microelectron J 32:955–958CrossRefGoogle Scholar
  23. 23.
    Adar F (2014) Raman s of metal oxides, Spectroscopy. Solutions for materials analysis 29:14–22Google Scholar
  24. 24.
    Liu Y, Cheng B, Wang KK, Ling GP, Cai J et al (2014) Study of Raman spectra for γ-Al2O3 models by using first-principles method. Solid State Commun 178:16–22CrossRefGoogle Scholar
  25. 25.
    Dobrovinskaya ER, Lytvynov LA, Pishchik V, Valerian (2009) Sapphire: Material, Manufacturing, Applications, Springer book, Springer Publishing Company, Incorporated, ISBN:9780387856957Google Scholar
  26. 26.
    Huang H, Li X, Xu X (2017) An experimental research on the force and energy during the sapphire sawing using reciprocating electroplated diamond wire saw. J Manuf Sci Eng 139:121011–121011-5Google Scholar
  27. 27.
    Chung C, Tsay GD, Tsai MH (2014) Distribution of diamond grains in fixed abrasive wire sawing. Int J Adv Manuf Technol 73:1485–1494CrossRefGoogle Scholar
  28. 28.
    Liu T, Ge P, Bi W, Gao Y (2017) Subsurface crack damage in silicon wafers induced by diamond wire sawing. Mater Sci Semicond Process 57:147–156CrossRefGoogle Scholar

Copyright information

© Springer-Verlag London Ltd., part of Springer Nature 2018

Authors and Affiliations

  • Ajay Gupta
    • 1
  • Chao-Chang A. Chen
    • 1
  • Hsien-Wei Hsu
    • 1
  1. 1.Department of Mechanical EngineeringNational Taiwan University of Science and TechnologyTaipeiTaiwan

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