A new processing technique for fabrication of ultra-thin wafer

  • Yibo Zeng
  • Jie Zhang
  • Hui Zhou
  • Hang GuoEmail author


Ultra-thin wafer with high quality was obtained by a new processing technique, which combined ultrasonic wet etching, temporary bonding, and chemical and mechanical polishing (CMP). In order to obtain a warp-free thin wafer, the pristine silicon wafer was subjected to initial thinning by ultrasonic wet etching. The temporary bonding was then conducted to anchor the wafer and ensure a stress-free de-bonding of the polished ultra-thin wafer from the supporting wafer. The subsequent CMP was applied to further reduce the thickness and roughness of the wafer. Measurements showed the as-fabricated ultra-thin wafer had an average thickness of 76 ± 2 μm, an average surface roughness of 0.32 nm, and a compressive stress of 101.4 MPa. The as-fabricated ultra-thin wafer showed improved overall appearance, with no obvious breakage, deformation, or damages on the surface.


Ultra-thin wafer Ultrasonic wet etching Chemical and mechanical polishing Temporary bonding 


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Funding information

This work is financially supported by the University-Industry Collaboration Program of Fujian Province (2015H6021).


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Copyright information

© Springer-Verlag London Ltd., part of Springer Nature 2018

Authors and Affiliations

  1. 1.Pen-Tung Sah Institute of Micro-Nano Science and Technology of Xiamen UniversityXiamenChina

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