Innovative chemical mechanical polish design and experiments

ORIGINAL ARTICLE
First Online:
Received:
Accepted:
  • 245 Downloads

Abstract

An innovative design for intelligent chemical mechanical polishing (CMP) control system is proposed and verified by experiments. Online measurement and real-time feedback are integrated to eliminate the shortcomings of traditional approaches, e.g., the batch-to-batch discrepancy of required polishing time, over consumption of chemical slurry, and non-uniformity across the wafer. The major advantage of the proposed method is that the finish of local surface roughness can be consistent, no matter where the inner-ring region or outer-ring region is concerned. Secondly, it is able to eliminate the edge effect: the interfacial-induced stress near the wafer edge is generally much higher than that near the wafer center. At last, by using the proposed intelligent chemical mechanical polishing strategy, the quality of the finished goods certainly upgraded.

Keywords

Chemical mechanical polishing Active magnetic actuator Online measurement 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Hocheng H, Tsai HY, Su YT (2001) Modeling and experimental analysis of the material removal rate in the chemical mechanical planarization of dielectric films and bare silicon wafers. J Electrochem Soc 148:G581–G586. doi: 10.1149/1.1401087 CrossRefGoogle Scholar
  2. 2.
    Zhou P, Guo R, Kang D, Jin Z (2013) A mixed elastohydrodynamic lubrication model with layered elastic theory for simulation of chemical mechanical polishing. Int J Adv Manuf Technol 69:1009–1016. doi: 10.1007/s00170-013-5108-5 CrossRefGoogle Scholar
  3. 3.
    Zhong ZW, Tian YB, Ang YJ, Wu H (2012) Optimization of the chemical mechanical polishing process for optical silicon substrates. Int J Adv Manuf Technol 60:1197–1206. doi: 10.1007/s00170-011-3668-9 CrossRefGoogle Scholar
  4. 4.
    Chiu JT, Lin YY (2008) Modal analysis of multi-layer structure for chemical mechanical polishing process. Int J Adv Manuf Technol 37:83–91. doi: 10.1007/s00170-007-0960-9 CrossRefGoogle Scholar
  5. 5.
    Wang D, Lee J, Bibby KT, Beaudoin S, Cale T (1997) Von Mises stress in chemical–mechanical polishing processes. J Electrochem Soc 144:1121–1127. doi: 10.1149/1.1837542 CrossRefGoogle Scholar
  6. 6.
    Sorooshian J, Philipossian A, Stein D, Timon R, Hetherington DL (2005) Dependence of oxide pattern density variation on motor current endpoint detection during shallow trench isolation chemical mechanical planarization. Jpn J Appl Phys 44:1219–1224. doi: 10.1143/JJAP.44.1219 CrossRefGoogle Scholar
  7. 7.
    Xu C, Guo DM, Jin ZJ, Kang RK (2010) A signal processing method for the friction-based endpoint detection system. J Semicond 31:126002. doi: 10.1088/1674-4926/31/12/126002 CrossRefGoogle Scholar
  8. 8.
    Hong HC, Huang YL (2004) In situ endpoint detection by pad temperature in chemical–mechanical polishing of copper overlay. IEEE Trans Semicond Manuf 17:180–187. doi: 10.1109/TSM.2004.826933 CrossRefGoogle Scholar
  9. 9.
    Chen LJ, Huang YL, Lin ZH, Chiou HW (1998) Pad thermal image end-pointing for CMP process. In Proc 3rd Int CMP for ULSI Multilevel Interconnection Conf, Santa Clara, CA, USA, pp. 20.Google Scholar
  10. 10.
    Chan DA, Swedek B, Wiswesser A, Birang M (1998) Process control and monitoring with laser interferometry based endpoint detection in chemical mechancial planarization. IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Boston, pp 377–384Google Scholar
  11. 11.
    Hong HC, Huang YL (1999) A comprehensive review of endpoint detection in chemical mechanical planarization for deep-submicron integrated circuits manufacturing. Int J Mater Prod Technol 3B2:1–18. doi: 10.1504/IJMPT.2003.002503 Google Scholar
  12. 12.
    DeGarmo EP (2003) Materials and processes in manufacturing, 9th edn. Wiley, New JerseGoogle Scholar
  13. 13.
    Preston FW (1927) The theory and design of plate glass polishing machines. J Soc Glass Technol 11:214–257Google Scholar
  14. 14.
    Zeng X, Ji SM, Tan DP, Jin MS, Wen DH, Zhang L (2013) Softness consolidation abrasives material removal characteristic oriented to laser hardening surface. Int J Adv Manuf Technol. doi: 10.1007/s00170-013-4985-y Google Scholar
  15. 15.
    Cook LM (1990) Chemical process in glass polishing. J Non-Cryst Solids 120:152–171. doi: 10.1016/0022-3093(90)90200-6 CrossRefGoogle Scholar
  16. 16.
    Johnson KL (1989) Contact mechanics. Cambridge University Press, Cambridge, pp 406–416Google Scholar
  17. 17.
    Greenwood JA, Williamson JBP (1966) Contact of nominally flat surface. Proc R Soc Lond A295:300–319. doi: 10.1098/rspa.1966.0242 CrossRefGoogle Scholar
  18. 18.
    Shi FG, Zhao B (1998) Modeling of chemical mechanical polishing with soft pad. Appl Phys A Mater Sci Proc 67:249–252. doi: 10.1007/s003390050766 CrossRefGoogle Scholar
  19. 19.
    Kim JG, Park KS, Park NC, Yang H, Park YP (2009) Improved air gap control using optimized antishock control algorithm for sil-based near-field storage system. International Symposium on Optomechatronic Technologies, Istanbul, pp 98–103Google Scholar
  20. 20.
    Miller DE, Mansouri N (2010) Model reference adaptive control using simultaneous probing, estimation, and control. IEEE Trans Autom Control 55:2014–2029. doi: 10.1109/TAC.2010.2042983 CrossRefMathSciNetGoogle Scholar
  21. 21.
    Liu Y, Cheng T, Zuo L (2001) Adaptive control constraint of machining processes. Int J Adv Manuf Technol 17:720–726. doi: 10.1007/s001700170117 CrossRefGoogle Scholar

Copyright information

© Springer-Verlag London 2014

Authors and Affiliations

  • Nan-Chyuan Tsai
    • 1
  • Sheng-Ming Huang
    • 1
  • Chih-Che Lin
    • 1
  1. 1.Department of Mechanical EngineeringNational Cheng Kung UniversityTainanTaiwan

Personalised recommendations