Circuits, Systems, and Signal Processing

, Volume 36, Issue 2, pp 495–510 | Cite as

A Dual-Wideband CMOS LNA Using Gain–Bandwidth Product Optimization Technique

  • Chun-Chieh Chen
  • Yen-Chun Wang


This paper presents a dual-wideband, common-gate, cascode low-noise amplifier (LNA) using gain–bandwidth product optimization technique. This approach shrinks the aspect ratio of the cascode MOS device, thereby reducing the equivalent parasitic capacitance of the resonator load to optimize the gain–bandwidth product of the LNA. The input impedance of the proposed LNA is analyzed, and the noise factor is well predicted through analytical equations. Measurement results that show well agreement with post-simulation results demonstrate the feasibility of this technique. In low-band mode, experimental results presented a maximum \(\left| S_{21} \right| \) of 13.4 dB over a \(-\)3-dB bandwidth of 3.1–4.8 GHz with a minimum noise figure of 4.5 dB. In high-band mode, the proposed LNA achieved a maximum \(\left| S_{21} \right| \) of 13.6 dB with a minimum noise figure of 6.2 dB over a \(-\)3-dB bandwidth of 7.3–9.4 GHz. A test chip with a die area of 0.83 mm\(^{2}\) was fabricated using a 0.18 \(\upmu \)m CMOS process. The proposed dual-wideband LNA consumes 9.1 mW, excluding the buffer, from a supply voltage of 1.8 V.


Low-noise amplifier (LNA) Dual-band Gain–bandwidth product Common-gate 


  1. 1.
    N. Cho, J. Bae, H.J. Yoo, A 10.8 mW body channel communication/MICS dual-band transceiver for a unified body sensor network controller. IEEE J. Solid State Circuits 44(12), 3459–3468 (2009)CrossRefGoogle Scholar
  2. 2.
    G.Z. Fatin, Z.D. Koozehkanani, H. Sjöland, A 90 nm CMOS +11 dBm IIP3 4 mW dual-band LNA for cellular handsets. IEEE Microw. Wirel. Compon. Lett. 20(9), 513–515 (2010)CrossRefGoogle Scholar
  3. 3.
    Y. Gao, Y.J. Zheng, B.L. Ooi, 0.18 \(\upmu \)m CMOS dual-band UWB LNA with interference rejection. Electron. Lett. 43(20), 1096–1098 (2007)CrossRefGoogle Scholar
  4. 4.
    H. Hashemi, A. Hajimiri, Concurrent multiband low-noise amplifiers—theory, design, and applications. IEEE Trans. Microw Theory Tech. 50(1), 288–301 (2002)CrossRefGoogle Scholar
  5. 5.
    P. Heydari, Design and analysis of a performance-optimized CMOS UWB distributed LNA. IEEE J. Solid State Circuits 42(9), 1892–1905 (2007)CrossRefGoogle Scholar
  6. 6.
    Z.Y. Huang, C.C. Hung, CMOS dual-band low-noise amplifier for world-wide WiMedia ultra-wideband wireless personal area networks system. in Proceeding of Asia-Pacific Microwave Conference, 2010 pp. 334–337Google Scholar
  7. 7.
    H.B. Kia, A.K. A’ain, I. Grout, I. Kamisian, A reconfigurable low-noise amplifier using a tunable active inductor for multistandard receivers. Circuits Syst. Signal Process. 32, 979–992 (2013)CrossRefGoogle Scholar
  8. 8.
    T.H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, 2nd edn. (Cambridge University Press, Cambridge, 2004)Google Scholar
  9. 9.
    Z. Li, R. Quintal, K.O. Kenneth, A dual-band CMOS front-end with two gain modes for wireless LAN applications. IEEE J. Solid State Circuits 39(11), 2069–2073 (2004)CrossRefGoogle Scholar
  10. 10.
    J.Y. Lin, H.K. Chiou, Power-constrained third-order active notch filter applied in IR-LNA for UWB standards. IEEE Trans. Circuits Syst. II: Express Briefs 58(1), 11–15 (2011)CrossRefGoogle Scholar
  11. 11.
    L.H. Lu, H.H. Hsieh, Y.S. Wang, A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier. IEEE Microw. Wirel. Compon. Lett. 15(10), 685–687 (2005)CrossRefGoogle Scholar
  12. 12.
    M.A. Martins, K. van Hartingsveldt, J.R. Fernandes, M.M. Silva, C.J.M. Verhoeven, Low noise amplifiers with double loop feedback. Circuits Syst. Signal Process. 32, 541–558 (2013)MathSciNetCrossRefGoogle Scholar
  13. 13.
    N.M. Neihart, J. Brown, X. Yu, A dual-band 2.45/6 GHz CMOS LNA utilizing a dual-resonant transformer-based matching network. IEEE Trans. Circuits Syst. I: Regul. Pap. 59(8), 1743–1751 (2012)MathSciNetCrossRefGoogle Scholar
  14. 14.
    B. Park, S. Choi, S. Hong, A low-noise amplifier with tunable interference rejection for 3.1- to 10.6-GHz UWB systems. IEEE Microw. Wirel. Compon. Lett. 20(1), 40–42 (2010)CrossRefGoogle Scholar
  15. 15.
    Md.M. Reja, K. Moez, I. Filanovsky, An area-efficient multistage 3.0- to 8.5-GHz CMOS UWB LNA using tunable active inductors. IEEE Trans. Circuits Syst. II: Express Briefs 57(8), 587–591 (2010)Google Scholar
  16. 16.
    N. Shiramizu, T. Masuda, M. Tanabe, K. Washio, A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-\(\upmu \)m SiGe BiCMOS technology. in IEEE Radio Frequency Integrated Circuits Symposium, 2005, pp. 39–42Google Scholar
  17. 17.
    H. Song, H. Kim, K. Han, J. Choi, C. Park, B. Kim, A sub-2 dB NF dual-band CMOS LNA for CDMA/WCDMA applications. IEEE Microw. Wirel. Compon. Lett. 18(3), 212–214 (2008)CrossRefGoogle Scholar
  18. 18.
    G.M. Sung, X.J. Zhang, A 2.4-GHz/5.25-GHz CMOS variable gain low noise amplifier using gate voltage adjustment. in IEEE International Midwest Symposium on Circuits and Systems, 2013, pp. 776–779Google Scholar
  19. 19.
    X. Tang, F. Huang, Y. Zhang, S. Lin, Design of a reconfigurable low noise amplifier for IMT-A and UWB systems. in IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, 2012, pp. 1–4Google Scholar
  20. 20.
    T.K.K. Tsang, M.N. El-Gamal, Dual-band sub-1V CMOS LNA for 802.11a/b WLAN applications. in IEEE International Symposium on Circuits and Systems, I-217-I-220 2003Google Scholar
  21. 21.
    A. Vallese, A. Bevilacqua, C. Sandner, M. Tiebout, A. Gerosa, A. Neviani, Analysis and design of an integrated notch filter for the rejection of interference in UWB systems. IEEE J. Solid State Circuits 44(2), 331–343 (2009)CrossRefGoogle Scholar
  22. 22.
    K. Xuan, K.F. Tsang, W.C. Lee, S.C. Lee, 0.18 \(\upmu \)m CMOS dual-band low-noise amplifier for ZigBee development. Electron. Lett. 46(1), 85–86 (2010)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  1. 1.Department of Electronic EngineeringChung-Yuan Christian UniversityChung-Li District, Taoyuan CityTaiwan

Personalised recommendations