Circuits, Systems, and Signal Processing

, Volume 35, Issue 9, pp 3066–3085 | Cite as

Ultra-Fast Current Mode Sense Amplifier for Small \(I_{\mathrm{CELL}}\) SRAM in FinFET with Improved Offset Tolerance

  • Bhupendra Singh Reniwal
  • Vikas Vijayvargiya
  • Santosh Kumar Vishvakarma
  • Devesh Dwivedi
Article

Abstract

In this paper, a novel, high-performance and robust sense amplifier (SA) design is presented for small \(I_\mathrm{CELLl}\) SRAM, using fin-shaped field effect transistors (FinFET) in 22-nm technology. The technique offers data-line-isolated current sensing approach. Compared with the conventional CSA (CCSA) and hybrid SA (HSA), the proposed current feed-SA (CF-SA) demonstrates 2.15\(\times \) and 3.02\(\times \) higher differential current, respectively, for \({V}_{\mathrm{DD}}\) of 0.6 V. Our results indicate that even at the worst corner, CF-SA can provide 2.23\(\times \) and 1.7\(\times \) higher data-line differential voltage compared with CCSA and HSA, respectively. Further, 66.89 and 31.47 % reductions in the cell access time are achieved compared to the CCSA and HSA, respectively, under similar \(I_\mathrm{CELLl}\) and bit-line and data-line capacitance. Statistical simulations have proved that the CF-SA provides high read yield with 32.39 and 22.24 % less \(\upsigma _{\mathrm{Delay}}\). It also offers a much better read effectiveness and robustness against the data-line capacitance as well as \({V}_{\mathrm{DD}}\) variation. Furthermore, the CF-SA is able to tolerate a large offset of the input devices, up to 80 mV at \({V}_{\mathrm{DD}}=0.6\hbox {V}\).

Keywords

Process variation Read yield Delay Static random access memory (SRAM) Cell current 

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • Bhupendra Singh Reniwal
    • 1
  • Vikas Vijayvargiya
    • 1
  • Santosh Kumar Vishvakarma
    • 1
  • Devesh Dwivedi
    • 2
  1. 1.Nanoscale Devices, VLSI Circuit and System Design Lab, Discipline of Electrical EngineeringIndian Institute of Technology IndoreIndoreIndia
  2. 2.SRAM Development, System and Technology GroupIBMBangaloreIndia

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