The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors

  • Ingenuin Gasser

Abstract.

The limit of vanishing Debye length in a nonlinear bipolar drift diffusion model for semiconductors is studied. The limit is performed on both the initial time layer and the original time scale. In both cases the limiting problems are identified. A main tool in the analysis are entropy methods.

Key words: Drift diffusion model for semiconductors, Debye length, quasineutral limit, entropy methods. 

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Copyright information

© Birkhäuser Verlag, Basel, 2001

Authors and Affiliations

  • Ingenuin Gasser
    • 1
  1. 1.Fachbereich Mathematik, Universität Hamburg, Bundesstraße 55, D-20146 Hamburg, Germany, e-mail: gasser@math.uni-hamburg.deDE

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