JOM

, Volume 48, Issue 8, pp 50–55 | Cite as

The dry etching of group III-nitride wide-bandgap semiconductors

  • H. P. Gillis
  • D. A. Choutov
  • K. P. Martin
Semiconductor Overview

Abstract

Fabricating device structures from the III-N semiconductors requires dry-etching processes that leave smooth surfaces with stoichiometric composition after transferring patterns with vertical sidewalls. Results obtained by standard methods are summarized, and the extent of concomitant ion bombardment damage is assessed. A new low-damage technique—low-energy electron- enhanced etching—that avoids ion bombardment altogether is described, and early results for III-N materials are summarized. Etching issues critical in forming contacts and fabricating laser facets and mirrors are highlighted, and some prospects for future work are also identified.

Keywords

Active Layer Etch Rate Vertical Sidewall Etch Profile Electron Cyclotron Reso 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© TMS 1996

Authors and Affiliations

  • H. P. Gillis
    • 1
  • D. A. Choutov
    • 2
  • K. P. Martin
    • 2
  1. 1.Department of Chemistry and BiochemistryUniversity of CaliforniaLos AngelesUSA
  2. 2.Microelectronics Research CenterGeorgia Institute of TechnologyUSA

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