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Refractory metals in submicron IC architecture

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Abstract

Materials traditionally used in integrated circuits have limitations as those circuits reach submicron design rules. Refractory metals have found their place in very-large-scale-integration device technologies, and an experimental program involving the use of tungsten as a gate material has been undertaken, with special emphasis on purity requirements. Bias temperature stress capacitance-voltage measurements show that very low levels of mobile ion contamination can be obtained in metal oxide semiconductor capacitors with tungsten gates sputtered from a special high-purity target.

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Diesburg, D.E., Castel, E.D. Refractory metals in submicron IC architecture. JOM 41, 23–26 (1989). https://doi.org/10.1007/BF03220245

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Keywords

  • Refractory Metal
  • Static Random Access Memory
  • Diffusion Barrier Layer
  • Gate Material
  • Metal Oxide Semiconductor Capacitor