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Growth of monolayered poly(l — lactide) lamellar crystals on a substrate

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Abstract

Hydroxyl groups were introduced onto the surface of a silicon wafer by O2 plasma treatment. Poly(l-lactide) (l-PLA) was attached onto the surface-modified silicon wafer by the ring-opening polymerization ofl-lactide using the hydroxyl group as an initiator. Lamellar single crystals ofl-PLA were grown directly on thel-PLA-attached silicon wafer from a 0.025% solution in acetonitrile at 5 °C. A well-separated, lozenge-shaped, monolayered lamellar single crystal was prepared because thel-PLA-attached silicon wafer acts as an initial nucleus.

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Lee, W., Lee, J. & Ha, C. Growth of monolayered poly(l — lactide) lamellar crystals on a substrate. Macromol. Res. 11, 511–513 (2003). https://doi.org/10.1007/BF03218985

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Keywords

  • plasma treatment
  • poly(l-lactide)
  • single crystal