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Gold Bulletin

, Volume 20, Issue 3, pp 47–53 | Cite as

An introduction to gold gettering in silicon

and a discussion of intrinsic gettering
  • Thomas A. Baginski
Open Access
Article

Abstract

Metals, and particularly gold, introduce electrical states into silicon which act as traps for charge carriers. While this is desirable in some devices, in others it degrades performance and must be removed by gettering. This paper discusses the problem, and presents experimental studies on the mechanism of intrinsic gettering of gold.

Keywords

Silicon Wafer High Defect Density Annealing Parameter Denude Zone Control Wafer 
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References

  1. 1.
    L.E. Katz, P.F. Schmidt and C.W. Pearce, ‘Neutron Activation Study of a Gettering Treatment for Czochralski Silicon Substrates’,J. Electrochem. Soc., 1981,128, 620–624CrossRefGoogle Scholar
  2. 2.
    H. Tsuya, F. Shimura, K. Ogawa and T. Kamamura, ‘A Study on Intrinsic Gettering in CZ Silicon Crystals: Evaluation, Thermal History Dependence and Enhancement’,J. Electrochem. Soc., 1982,129, 374–379CrossRefGoogle Scholar
  3. 3.
    R.A. Craven and H.W. Korb, ‘Internal Gettering in Silicon’,Solid State Tech., 1981,24, 55–61Google Scholar
  4. 4.
    R.A. Craven,Semiconductor Silicon, The Electrochemical Society Softbound Symposium Series, Princeton, NJ, 1981, 254–271Google Scholar
  5. 5.
    F. Shimura, H. Tsuya and T. Kawamura, ‘Thermally Induced Defect Behaviour and Effective Intrinsic Gettering Sinks in Silicon Wafers’,J. Electrochem. Soc., 1981,128, 1579–1583CrossRefGoogle Scholar
  6. 6.
    N. Inove, J. Osaka and K. Wada, ‘Oxide Micro-Precipitates in As-Grown CZ Silicon’,J. Electrochem. Soc., 1982,129, 2780–2788CrossRefGoogle Scholar
  7. 7.
    E.M. Murray, Denuded Zone Formation in P 100 Silicon,J. Appl. Phys., 1984,55, 536–541CrossRefGoogle Scholar
  8. 8.
    C.L. Reed, ‘Effects of Abrasion Gettering on Silicon Material with Swirl Defects’,J. Electrochem. Soc., 1980,127, 2058–2062CrossRefGoogle Scholar
  9. 9.
    A.J.R. de Koch and W.M. van de Wiggert, ‘The Influence of Thermal Point Defects on the Precipitation of Oxygen in Dislocation-Free Silicon Crystals’,Appl. Phys. Lett., 1981,38, 888–900CrossRefGoogle Scholar
  10. 10.
    U. Gosele and W. Frank, ‘Point Defects, Diffusion Mechanisms, and the Shrinkage and Growth of Extended Defects in Silicon’, inDefects in Semiconductors, North-Holland, 1981, 55–70Google Scholar
  11. 11.
    R.B. Fair, ‘The Effects of Impurity Diffusion and Surface Damage on Oxygen Precipitation in Silicon’,J. Appl. Phys., 1983,54, 388–391CrossRefGoogle Scholar
  12. 12.
    S.M. Hu, ‘Precipitation of Oxygen in Silicon: Some Phenomena and a Nucleation Model’,J. Appl. Phys., 1981,52, 3974–3984CrossRefGoogle Scholar
  13. 13.
    R.A. Craven and H.W. Korb, ‘Internal Gettering in Silicon’,Solid State Tech., 1981,24, 55–61Google Scholar
  14. 14.
    R.A. Craven,Semiconductor Silicon, The Electrochemical Society Softbound Symposium Series, Princeton, NJ, 1981, 254–271Google Scholar
  15. 15.
    A.G. Nassibian and B. Golja, ‘Comparison of Ar, O, and Cl Ion Implant Damage Gettering of Gold from Silicon Using Metal-Oxide Silicon Techniques’,J. Appl. Phys., 1982,53, 6168–6173CrossRefGoogle Scholar
  16. 16.
    K.D. Beyer and T.H. Yeh, ‘Impurity Gettering of Silicon Damage Generated by Ion Implantation Through SiO2 Layers’,J. Electrochem. Soc., 1982,129, 2527–2530CrossRefGoogle Scholar
  17. 17.
    M.C. Chen and V.J. Silvestri, ‘Post-Epitaxial Polysilicon and Si3N4 Gettering in Silicon’,J. Electrochem. Soc., 1982,129, 1294–1299CrossRefGoogle Scholar
  18. 18.
    D. Lecrosnier, J. Paugam, G. Pelous, F. Richou and M. Salvi, ‘Gold Gettering in Silicon by Phosphorus Diffusion and Argon Implantation; Mechanisms and Limitations’,J. Appl. Phys., 1981,52, 5090–5097CrossRefGoogle Scholar
  19. 19.
    M.J.T. Lo, J.G. Skalnik and P.F. Ordung, ‘Implantation Gettering of Gold in Silicon’,J. Electrochem. Soc., 1981,128, 1569–1573CrossRefGoogle Scholar
  20. 20.
    Y. Hayafugi, ‘Laser Damage Gettering and its Application to Lifetime Improvement in Silicon’,J. Electrochem. Soc., 1981,128, 1875–1880Google Scholar
  21. 21.
    T.E. Seidel, R.L. Meek and A.G. Cullis, ‘Direct Comparison of Ion-Damage Gettering and Phosphorus-Diffusion Gettering of Au in Si’,J. Appl. Phys., 1975,46, 600–609CrossRefGoogle Scholar
  22. 22.
    S.P. Murarka, ‘Study of the Phosphorus Gettering of Gold in Silicon by Use of Neutron Activation Analysis’,J. Electrochem. Soc., 1976,123, 765–767CrossRefGoogle Scholar
  23. 23.
    G.A. Rozgongi, ‘Elimination of Oxidation-Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers; Phosphorus Diffusion-Induced Misfit Dislocation’,J. Electrochem. Soc., 1975,122, 1725–1729CrossRefGoogle Scholar
  24. 24.
    A.G. Nassibian, V.A. Browne and K.D. Perkins, ‘Generation Lifetime Investigation of Ion-Damage Gettering Silicon Using MOS Structure’,J. Appl. Phys., 1976,47, 992–996CrossRefGoogle Scholar
  25. 25.
    T.W. Sigmon, ‘Ion Implantation Gettering of Gold in Si’,J. Electrochem. Soc., 1976,123, 1116–1117CrossRefGoogle Scholar
  26. 26.
    Y. Matsuoka, ‘Laser-Induced Damage to Semiconductors’,Appl. Phys., 1976,9, 215–224Google Scholar
  27. 27.
    K. Murase, ‘Argon Implantation Gettering for Through-Oxide Arsenic Implanted Layer’,J. Appl. Phys., 1977,48, 4404–4406CrossRefGoogle Scholar
  28. 28.
    C.W. Pearce and V.J. Zaleckas, ‘New Approach to Lattice Damage Gettering’,J. Electrochem. Soc., 1979,126, 1436–1437CrossRefGoogle Scholar
  29. 29.
    O. Paz, E. Hearn and E. Fayo, ‘POCl3 and Boron Gettering of LSI Silicon Devices: Similarities and Differences’,J. Electrochem. Soc., 1979,126, 1754–1761CrossRefGoogle Scholar
  30. 30.
    C.L. Reed, ‘Effects of Abrasion Gettering on Silicon Material with Swirl Defects’,J. Electrochem. Soc., 1980,127, 2058–2062CrossRefGoogle Scholar

Copyright information

© World Gold Council 1987

Authors and Affiliations

  • Thomas A. Baginski
    • 1
  1. 1.Electrical Engineering DepartmentAuburn UniversityAuburnUSA

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