Summary
The radiation damage induced by 27 MeV protons has been studied on diodes fabricated from standard and oxygen-enriched FZ substrates. Measurements confirm that the damage constant α is insensitive to the oxygen concentration whereas the acceptor creation rate parameter β is lower for oxygenated diodes. However, the effect is significantly smaller than that observed with high-energy protons, but somewhat higher than that by reactor neutrons. Data have been collected at the irradiation facility of the Tandem at the INFN Laboratories of Legnaro.
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References
Huhtinen M. andAarnio P.,Nucl. Instrum. Methods A,336 (1993) 98.
CMS Collaboration,Technical Proposal, CERN/LHCC/94–3, LHCC/P1, 15 December 1994.
ATLAS Collaboration,Technical Proposal, CERN/LHCC/94–3, LHCC/P2, 15 December 1994.
ROSE Collaboration,2nd RD48 Status Report, CERN/LHCC 98–3, October 1998.
Ruzin A.,Casse G.,Glaser M.,Lemeilleur F.,Matheson J. andZanet A.,Radiation effects in silicon detectors processed on carbon and oxygen rich substrates, inProceedings of the European ENDEASD Workshop, Santorini, 17–3 April 1999.
ROSE Collaboration,Proposal, CERN/LHCC 96–3, P62/LHC R & D, 23 April 1996.
Polovodice, Vovodvorska 994, 142 21 Prague 4, Czech Republic.
Itme, Institute of Electronics Material Technology, ul. Wolczynska 133, 01–3, Warszawa, Poland.
Ite, Institute of Electron Technology, Al. Lotnikow 32/46, 02–3 Warszawa, Poland.
Silicon Valley Microelectronics, 97 East Brokaw Road, San José, Ca. 95112–3, USA.
Evans Europa, Brunel University, Uxbridge, Middlesex UB8 3PH, UK.
Huhtinen M.,Aarnio P.,Estimation of pion induced displacement damage in silicon, HV-SEFT R 1993-C2, May 1993.
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Bisello, D., Descovich, M., Kaminsky, A. et al. Radiation damage of oxygenated silicon diodes by 27 MeV protons. Il Nuovo Cimento A (1971-1996) 112, 1377–1382 (1999). https://doi.org/10.1007/BF03185603
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DOI: https://doi.org/10.1007/BF03185603