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Influence of laser treatment on the electrical properties of plasma-enhanced-atomic-layer-deposited TiO2 thin films

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Abstract

TiO2 dielectric films with 38 nm thickness were grown on Si (100) substrates at 200°C by plasma-enhancedatomic-layer deposition. Laser-irradiated TiO2 films maintained an amorphous phase similar to as-grown films and showed an increase in permittivity and leakage current density with increasing laser powers and the number of laser shots at constant laser power. Laser-irradiation of TiO2 films at room temperature produced oxygen vacancies at the film surface and new Ti3− valences. The electrons and space charges produced through the defect chemistry increased the leakage current density and permittivity in laser-irradiated TiO2 films, respectively. The dielectric and electrical properties of the laser-irradiated TiO2 films were completely recovered to correspond with those of as-grown films by post-annealing at 300°C for 5 min in O2 ambient.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, 305-764, Daejeon, Korea

    Jeon-Ho Kim & Soon-Gil Yoon

  2. Electronic Ceramics Center (ECC), Department of Advanced Materials Engineering, Dong-Eui University, San 24 Gaya-dong, Busanjin-gu, 614-010, Busan, Korea

    Won-Jae Lee

  3. DNF Solution, 43-2 Munpyeong-dong, Daedeok-gu, 306-220, Daejeon, Korea

    Jin-Dong Kim

Authors
  1. Jeon-Ho Kim
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  2. Won-Jae Lee
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  3. Jin-Dong Kim
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  4. Soon-Gil Yoon
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Correspondence to Soon-Gil Yoon.

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Kim, JH., Lee, WJ., Kim, JD. et al. Influence of laser treatment on the electrical properties of plasma-enhanced-atomic-layer-deposited TiO2 thin films. Met. Mater. Int. 11, 285–289 (2005). https://doi.org/10.1007/BF03027330

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