Bulletin of Materials Science

, Volume 15, Issue 2, pp 143–148 | Cite as

Band gap and structural parameter variation of CuInSe2(1-x)S2x solid-solution in the form of thin films

  • Y D Tembhurkar
  • J P Hirde
Article
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Revised:

Abstract

CuInSe2(1-x)S2xthin films were deposited by spray pyrolysis. Lattice parametersa andc, for all composition parametersX, were calculated from the Phillips X-ray diffractometer. The structure remained tetragonal chalcopyrite throughout. Optical band gap (E g) was determined for the composition parameterX from the transmittance study at room temperature. Variation ofE g,a andc withX was found to be linear.

Keywords

Ternary semiconductor compounds spray pyrolysis chalcopyrite structure 
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Copyright information

© Indian Academy of Sciences 1992

Authors and Affiliations

  • Y D Tembhurkar
    • 1
  • J P Hirde
    • 1
  1. 1.Department of PhysicsInstitute of ScienceNagpurIndia

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