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Chinese Science Bulletin

, Volume 46, Issue 23, pp 2009–2013 | Cite as

Growth of AgGaS2 single crystal by descending crucible with rotation method and observation of properties

  • Beijun ZhaoEmail author
  • Shifu Zhu
  • Zhenghui Li
  • Fengliang Yu
  • Xinghua Zhu
  • Deyou Gao
Notes

Abstract

This note reports a new procedure of polycrystalline synthesis and a new technique of single crystal growth on AgGaS2, i.e. two-zone temperature oscillation vapor transporting and descending crucible with rotation. A single phase dense AgGaS2 polycrystalline ingot was synthesized, and a crack-free AgGaS2 single crystal with 15 mm in diameter and 30 mm in length was grown by the techniques mentioned above. Structure integrity of the crystal was studied by the X-ray diffraction technique. Six order X-ray spectra from the 011 face of the crystal were obtained, and an anomalous phenomenon was observed for the first time that intensity of the higher order diffraction peak is much stronger than that of the lower order diffraction peak. Etch-pits of the crystal were observed by the scanning electron microscopy (SEM).

Keywords

infrared nonlinear crystal AgGaS2 polycrystalline synthesis crystal growth X-ray diffraction etch-pits observation 

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Copyright information

© Science in China Press 2001

Authors and Affiliations

  • Beijun Zhao
    • 1
    Email author
  • Shifu Zhu
    • 1
  • Zhenghui Li
    • 1
  • Fengliang Yu
    • 1
  • Xinghua Zhu
    • 1
  • Deyou Gao
    • 1
  1. 1.Department of Materials ScienceSichuan UniversityChengduChina

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