Bulletin of Alloy Phase Diagrams

, Volume 6, Issue 4, pp 362–364 | Cite as

The Ga−Si (Gallium-Silicon) system

  • R. W. Olesinski
  • N. Kanani
  • G. J. Abbaschian


Solid Solubility Equi Diagram Alloy Phase Diagram Crys Structure Freezing Point Depression 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Cited References

  1. Indicates key paper48Kle: W. Klemm, L. Klemm, E. Hohmann, H. Volk, E. Orlamunder, and H. A. Klein, “Behavior of Group III Elements Alloyed with Each Other and with Group IV Elements,”Z. Anorg. Chem., 256, 239–252 (1948) in German. (Equi Diagram; Experimental; Indicates presence of a phase diagram)CrossRefGoogle Scholar
  2. 53Kec: P. H. Keck and J. Broder, “The Solubility of Silicon and Germanium in Gallium and Indium,”Phys. Rev. Lett., 90, 521–522 (1953). (Equi Diagram; Experimental)ADSGoogle Scholar
  3. 53Thu: C. D. Thurmond, “Equilibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. I.,”J. Phys. Chem., 57, 827–830 (1953). (Equi Diagram, Thermo; Theory)CrossRefGoogle Scholar
  4. 54Bur: J. A. Burton, “Impurity Centers in Ge and Si,”Physica, 20, 845–854 (1954). (Crys Structure, Equi Diagram; Theory)CrossRefADSGoogle Scholar
  5. 58Sav: Y. M. Savitskiy, V. V. Baron, and M. A. Tylkina, “Phase Diagrams on Properties of Alloys of Gallium and Thallium,”Russ. J. Inorg. Chem., 3, 310–327 (1958). (Equi Diagram; Experimental; Indicates presence of a phase diagram)Google Scholar
  6. 60Thu: C. D. Thurmond and M. Kowalchik, “Germanium and Silicon Liquidus Curves,”Bell Sys. Tech. J., 39, 169–204 (1960). (Equi Diagram, Thermo; Theory)Google Scholar
  7. 60Tru: F. A. Trumbore, “Solid Solubilities of Impurity Elements in Germanium and Silicon,”Bell Sys. Tech. J., 39, 205–233 (1960). (Equi Diagram; Experimental)Google Scholar
  8. 70Rao: M. V. Rao and W. A. Tiller, “Excess Free Energies in the Ge, Si and Ga Binary Systems—the α Parameter Approach,”J. Phys. Chem. Solids, 31, 191–198 (1970). (Thermo; Theory)CrossRefADSGoogle Scholar
  9. 74Jor: A. S. Jordan and M. E. Weiner, “Calculation of the Liquidus Isotherms and Component Activities in the Ga−As−Si and Ga−P−Si Ternary Systems,”J. Electrochem. Soc., 121, 1634–1641 (1974). (Thermo, Equi Diagram; Theory)CrossRefGoogle Scholar
  10. 77Bar: I. Barin, O. Knacke, and O. Kubaschewski,Thermochemical Properties of Inorganic Substances, Springer-Verlag, New York (1973);Supplement (1977). (Thermo; Compilation)Google Scholar
  11. 77Def: A. Defrain, “Metastable States of Gallium Undercooling and Polymorphism,”J. Chim. Phys., 74, 851–862 (1977) in French. (Meta Phases, Crys. Structure; Review)Google Scholar
  12. 77Gir: B. Girault, “Liquidus Curves of Several Silicon-Metal Systems,”C. R. Hebd. Séances Acad. Sci. B, 284, 1–4 (1977) in French (Equi Diagram; Experimental)Google Scholar
  13. 77Tho: D. D. Thornton, “The Gallium Melting-Point Standard: A Determination of the Liquid-Solid Equilibrium Temperature of Pure Gallium on the International Practical Temperature Scale of 1968,” NBS Spec. Pub. No. 481, 719–724 (1977). (Equi Diagram; Experimental)Google Scholar
  14. 79Tsa: M. Y. Tsai, B. G. Streetman, V. R. Deline, and C. A. Evans, Jr., “Gallium Distribution and Electrical Activation in Ga+-Implanted Si,”J. Electron. Mater., 8, 111–126 (1979). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  15. 80Har: S. Haridoss, F. Beniere, M. Gauneau, and A. Rupert, “Diffusion of Gallium in Silicon,”J. Appl. Phys., 51, 5833–5837 (1980). (Equi Diagram; Experimental)CrossRefADSGoogle Scholar
  16. 80Whi: C. W. White, S. R. Wilson, B. R. Appleton, and F. W. Young, Jr., “Supersaturated Substitutional Alloys Formed by Ion Implantation and Pulsed Laser Annealing of Group III and Group V Dopants in Silicon,”J. Appl. Phys., 51, 738–749 (1980). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  17. 81Ako: R. A Akopyan and V. V. Kachakhidze, “Specification of the Boundaries of Si-Base Homogeneity Regions in the Si−Al and Si−Ga Systems,”Izv. Akad. Nauk SSSR, Neorg. Mater., 17, 1792–1794 (1981) in Russian. (Equi Diagram; Experimental)Google Scholar
  18. 81Aro: B. M. Arora, J. M. Castillo, M. B. Kurup, and R. P. Sharma, “Thermal Annealing and Electrical Activation of High-Dose Gallium-Implanted Silicon,”J. Electron. Mater., 10, 845–862 (1981). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  19. 83Tma: N. Tmar, A. Pasturel, and C. Colinet, “Thermodynamics of (Si+In) (Si+Ga),”J. Chem. Thermodyn., 15 (11), 1037–1040 (1983). (Thermo)CrossRefGoogle Scholar

Copyright information

© Springer 1985

Authors and Affiliations

  • R. W. Olesinski
    • 1
  • N. Kanani
    • 1
  • G. J. Abbaschian
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of FloridaGainesville

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