Bulletin of Alloy Phase Diagrams

, Volume 6, Issue 3, pp 254–258 | Cite as

The As−Si (Arsenic-Silicon) system

  • R. W. Olesinski
  • G. J. Abbaschian


Arsenic Solid Solubility Equi Diagram Alloy Phase Diagram Crys Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Cited References

  1. 41Kle: W. Klemm and P. Pirscher, “Silicon Arsenide,”Z. Anorg. Chem., 247, 211–220 (1941) in German. (Equi Diagram; Experimental; Indicates presence of a phase diagram)CrossRefGoogle Scholar
  2. 53Hal: R.N. Hall, “Segregation of Impurities During the Growth of Germanium and Silicon Crystals,”J. Phys. Chem., 57, 836–839 (1953). (Equi Diagram; Experimental)CrossRefGoogle Scholar
  3. 53Thu: C.D. Thurmond, “Equilibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. I.,”J. Phys. Chem., 57, 827–830 (1953). (Thermo; Theory)CrossRefGoogle Scholar
  4. 54Bur: J.A. Burton, “Impurity Centers in Ge and Si,”Phys., 20, 845–854 (1954). (Equi Diagram; Theory)ADSGoogle Scholar
  5. 54Sch: K. Schubert, E. Dörre, and Günzel, “Crystal Structure Data for B-Element Phases,”Naturwissenschaften, 41, 448 (1954) in German. (Crys Structure; Experimental)CrossRefADSGoogle Scholar
  6. 58Wei: K. Weiser, “Theoretical Calculation of Distribution Coefficients of Impurities in Germanium and Silicon, Heats of Solid Solution,”J. Phys. Chem. Solids, 7, 118–126 (1958). (Thermo; Theory)CrossRefADSGoogle Scholar
  7. 60Thu: C.D. Thurmond and M. Kowalchik, “Germanium and Silicon Liquidus Curves,”Bell Sys. Tech. J., 39, 169–204 (1960). (Thermo; Theory)Google Scholar
  8. 60Tru: F.A. Trumbore, “Solid Solubilities of Impurity Elements in Germanium and Silicon,”Bell Sys. Tech. J., 39, 205–233 (1960). (Equi Diagram; Review)Google Scholar
  9. 65Wad: T. Wadsten, “The Crystal Structure of SiAs,”Acta Chem. Scand., 19, 1232–1238 (1965). (Crys Structure; Experimental)CrossRefGoogle Scholar
  10. 66Bec: C.G. Beck and R. Stickler, “Crystallography of SiP and SiAs Single Crystals and of SiP Precipitates in Si,”J. Appl. Phys., 37, 4683–4687 (1966). (Crys Structure; Experimental)CrossRefADSGoogle Scholar
  11. 67Wad: T. Wadsten, “The Crystal Structures of SiP2, SiAs2, and GeP,”Acta Chem. Scand., 21, 590–594 (1967). (Crys Structure; Experimental)Google Scholar
  12. 68Don: P.C. Donohue, W.J. Shemons, and J.L. Gillson, “Preparation and Properties of Pyrite-Type SiP2 and SiAs2,”J. Phys. Chem. Solids, 29, 807–813 (1968). (Crys Structure, Pressure; Experimental)CrossRefADSGoogle Scholar
  13. 70Rai: P. Rai-Choudhury and E.I. Salkovitz, “Doping of Epitaxial Silicon,”J. Crys. Growth, 7, 353–360 (1970). (Thermo; Theory)CrossRefADSGoogle Scholar
  14. 70Rao: M.V. Rao and W.A. Tiller, “Excess Free Energies in the Ge, Si and Ga Binary Systems—the α-Parameter Approach,”J. Phys. Chem. Solids, 31, 191–198 (1970). (Thermo; Theory)CrossRefADSGoogle Scholar
  15. Indicates key paper71San: J.S. Sandhu, and J.L. Reuter, “Arsenic Source Vapor Pressure Kinetics and Capsule Diffusion,”IBM J. Res. Develop., 15, 464–471 (1971). (Equi Diagram; Experimental; Indicates presence of a phase diagram)CrossRefGoogle Scholar
  16. 73Fai: R.B. Fair and G.R. Weber, “Effect of Complex Formation on Diffusion of Arsenic in Silicon,”J. Appl. Phys., 44, 273–279 (1973). (Equi Diagram; Experimental)CrossRefADSGoogle Scholar
  17. 73Sha: V.I. Shachnev, “Determination of Henry's Constants in the Crystallization from the Gas Phase of Epitaxial Silicon Layers Alloyed with Phosphorus and Arsenic,”Russ. J. Phys. Chem., 47, 132–134 (1973). (Thermo; Experimental)Google Scholar
  18. 73Uga: Ya. A. Ugay and S.N. Miroshnichenko, “Formation and Thermal Dissociation of SiAs2,Izv. Akad. Nauk SSSR Neorg. Mat. 9, 2051–2052 (1973) in Russian. (Crys Structure, Equi Diagram; Experimental)Google Scholar
  19. 74Jor: A.S. Jordan and M.E. Weiner, “Calculation of the Liquidus Isotherms and Component Activities in the Ga−As−Si and Ga−P−Si Ternary Systems,”J. Electrochem. Soc., 121, 1634–1641 (1974). (Thermo; Theory)CrossRefGoogle Scholar
  20. 74Miy: N. Miyamoto, E. Kuroda, and S. Yoshida, “The Behavior of Arsenic in Silicon During Heat Treatment,”J. Jpn. Soc. Appl. Phys., Suppl., 43, 408–414 (1974). (Equi Diagram; Experimental)Google Scholar
  21. 74Uga: Ya.A. Ugay, S.N. Miroshnichenko, and E.G. Goncharov, “Investigation of thep-T-x diagram of the Si−As System,”Izv. Akad. Nauk SSSR Neorg. Mat., 10, 1774–1777 (1974) in Russian. (Equi Diagram, Thermo; Experimental; Indicates presence of a phase diagram)Google Scholar
  22. 75Fai: R.B. Fair and J.C.C. Tsai, “The Diffusion of Ion-Implanted Arsenic in Silicon,”J. Electrochem. Soc., 122, 1689–1696 (1975). (Equi Diagram; Experimental)CrossRefGoogle Scholar
  23. 75Ohk: S. Ohkawa, Y. Nakajima, and Y. Fukukawa, “Arsenic Diffusion into Silicon from Elemental Source,”Jpn J. Appl. Phys., 14, 458–465 (1975). (Equi Diagram; Experimental)CrossRefADSGoogle Scholar
  24. 77Bar: I. Barin, O. Knacke, and O. Kubaschewski,Thermochemical Properties of Inorganic Substances (Supplement), Springer-Verlag, New York (1977). (Thermo; Compilation)Google Scholar
  25. 77Gei: H.-D. Geiler, G. Götz, K.-D. Klinge, and N. Triem, “Investigation of Laser Induced Diffusion and Annealing Processes of Arsenic-Implanted Silicon Crystals,”Phys. Status Solidi (a), 41, K171-K173 (1977). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  26. 77Sud: V.S. Sudavtsova and G.I. Batalin, “Calculation of the Activities of the Components of Liquid Me−Si Alloys from the Phase Diagrams,”Ukr. Khim. Zh., 43, 235–240 (1977) in Russian. (Thermo; Theory)Google Scholar
  27. 78Sri: G.R. Srinivasan, “Kinetics of Lateral Autodoping in Silicon Epitaxy,”J. Electrochem. Soc., 125, 146–151 (1978). (Thermo; Theory)CrossRefGoogle Scholar
  28. 78Ven: T.N.C. Venkatesan, J.A. Golovchenko, J.M. Poate, P. Cowan, and G.K. Celler, “Dose Dependence in the Laser Annealing of Arsenic-Implanted Silicon,”Appl. Phys. Lett., 33, 429–431 (1978). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  29. 79Bel: V.I. Belousov, “Calculation of the Activity Coefficient of Arsenic in Single Crystal Silicon,”Russ. J. Phys. Chem., 53, 1266–1267 (1979). (Thermo; Theory)Google Scholar
  30. 79Lie: A. Lietoila, J.F. Gibbons, T.J. Magee, J. Peng, and J.D. Hong, “Solid Solubility of As in Si as Determined by Ion Implantation and CW Laser Annealing,”Appl. Phys. Lett., 35, 532–534 (1979). (Equi Diagram; Experimental)CrossRefADSGoogle Scholar
  31. 80Fai: R.B. Fair, “Modeling Laser-Induced Diffusion of Implanted Arsenic in Silicon,”Proc. Electrochem. Soc., 80–81, 204–219 (1980). (Meta Phases; Experimental)Google Scholar
  32. 80Whi: C.W. White, S.R. Wilson, B.R. Appleton, and F.W. Young, Jr. “Supersaturated Substitutional Alloys Formed by Ion Implantation and Pulsed Laser Annealing of Group-III and Group-V Dopants in Silicon,”J. Appl. Phys., 51, 738–749 (1980). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  33. Indicates key paper81Uga: Ya.A. Ugay, E.G. Goncharov, N.F. Gladyshev, A.E. Popov, and N. Yu. Inozemtseva, “Tensimetric Study of the Si−As System,”Fiz. Khim. Prots. Polyprovod. Poverkh, 138–144 (1981) in Russian. (Equi Diagram, Thermo; Experimental; Indicates presence of a phase diagram)Google Scholar
  34. 82Gra: T. Graziani, K.T. Short, and J.S. Williams, “Comparison of Solubility Limits and Electrical Activities for Antimony and Arsenic Ion Implanted Silicon,”Phys. Lett., 91A, 231–233 (1982). (Meta Phases; Experimental)ADSGoogle Scholar

Copyright information

© Springer 1985

Authors and Affiliations

  • R. W. Olesinski
    • 1
  • G. J. Abbaschian
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of FloridaGainesville

Personalised recommendations