Bulletin of Alloy Phase Diagrams

, Volume 6, Issue 3, pp 254–258 | Cite as

The As−Si (Arsenic-Silicon) system

  • R. W. Olesinski
  • G. J. Abbaschian


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Cited References

  1. 41Kle: W. Klemm and P. Pirscher, “Silicon Arsenide,”Z. Anorg. Chem., 247, 211–220 (1941) in German. (Equi Diagram; Experimental; Indicates presence of a phase diagram)CrossRefGoogle Scholar
  2. 53Hal: R.N. Hall, “Segregation of Impurities During the Growth of Germanium and Silicon Crystals,”J. Phys. Chem., 57, 836–839 (1953). (Equi Diagram; Experimental)CrossRefGoogle Scholar
  3. 53Thu: C.D. Thurmond, “Equilibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. I.,”J. Phys. Chem., 57, 827–830 (1953). (Thermo; Theory)CrossRefGoogle Scholar
  4. 54Bur: J.A. Burton, “Impurity Centers in Ge and Si,”Phys., 20, 845–854 (1954). (Equi Diagram; Theory)ADSGoogle Scholar
  5. 54Sch: K. Schubert, E. Dörre, and Günzel, “Crystal Structure Data for B-Element Phases,”Naturwissenschaften, 41, 448 (1954) in German. (Crys Structure; Experimental)CrossRefADSGoogle Scholar
  6. 58Wei: K. Weiser, “Theoretical Calculation of Distribution Coefficients of Impurities in Germanium and Silicon, Heats of Solid Solution,”J. Phys. Chem. Solids, 7, 118–126 (1958). (Thermo; Theory)CrossRefADSGoogle Scholar
  7. 60Thu: C.D. Thurmond and M. Kowalchik, “Germanium and Silicon Liquidus Curves,”Bell Sys. Tech. J., 39, 169–204 (1960). (Thermo; Theory)Google Scholar
  8. 60Tru: F.A. Trumbore, “Solid Solubilities of Impurity Elements in Germanium and Silicon,”Bell Sys. Tech. J., 39, 205–233 (1960). (Equi Diagram; Review)Google Scholar
  9. 65Wad: T. Wadsten, “The Crystal Structure of SiAs,”Acta Chem. Scand., 19, 1232–1238 (1965). (Crys Structure; Experimental)CrossRefGoogle Scholar
  10. 66Bec: C.G. Beck and R. Stickler, “Crystallography of SiP and SiAs Single Crystals and of SiP Precipitates in Si,”J. Appl. Phys., 37, 4683–4687 (1966). (Crys Structure; Experimental)CrossRefADSGoogle Scholar
  11. 67Wad: T. Wadsten, “The Crystal Structures of SiP2, SiAs2, and GeP,”Acta Chem. Scand., 21, 590–594 (1967). (Crys Structure; Experimental)Google Scholar
  12. 68Don: P.C. Donohue, W.J. Shemons, and J.L. Gillson, “Preparation and Properties of Pyrite-Type SiP2 and SiAs2,”J. Phys. Chem. Solids, 29, 807–813 (1968). (Crys Structure, Pressure; Experimental)CrossRefADSGoogle Scholar
  13. 70Rai: P. Rai-Choudhury and E.I. Salkovitz, “Doping of Epitaxial Silicon,”J. Crys. Growth, 7, 353–360 (1970). (Thermo; Theory)CrossRefADSGoogle Scholar
  14. 70Rao: M.V. Rao and W.A. Tiller, “Excess Free Energies in the Ge, Si and Ga Binary Systems—the α-Parameter Approach,”J. Phys. Chem. Solids, 31, 191–198 (1970). (Thermo; Theory)CrossRefADSGoogle Scholar
  15. Indicates key paper71San: J.S. Sandhu, and J.L. Reuter, “Arsenic Source Vapor Pressure Kinetics and Capsule Diffusion,”IBM J. Res. Develop., 15, 464–471 (1971). (Equi Diagram; Experimental; Indicates presence of a phase diagram)CrossRefGoogle Scholar
  16. 73Fai: R.B. Fair and G.R. Weber, “Effect of Complex Formation on Diffusion of Arsenic in Silicon,”J. Appl. Phys., 44, 273–279 (1973). (Equi Diagram; Experimental)CrossRefADSGoogle Scholar
  17. 73Sha: V.I. Shachnev, “Determination of Henry's Constants in the Crystallization from the Gas Phase of Epitaxial Silicon Layers Alloyed with Phosphorus and Arsenic,”Russ. J. Phys. Chem., 47, 132–134 (1973). (Thermo; Experimental)Google Scholar
  18. 73Uga: Ya. A. Ugay and S.N. Miroshnichenko, “Formation and Thermal Dissociation of SiAs2,Izv. Akad. Nauk SSSR Neorg. Mat. 9, 2051–2052 (1973) in Russian. (Crys Structure, Equi Diagram; Experimental)Google Scholar
  19. 74Jor: A.S. Jordan and M.E. Weiner, “Calculation of the Liquidus Isotherms and Component Activities in the Ga−As−Si and Ga−P−Si Ternary Systems,”J. Electrochem. Soc., 121, 1634–1641 (1974). (Thermo; Theory)CrossRefGoogle Scholar
  20. 74Miy: N. Miyamoto, E. Kuroda, and S. Yoshida, “The Behavior of Arsenic in Silicon During Heat Treatment,”J. Jpn. Soc. Appl. Phys., Suppl., 43, 408–414 (1974). (Equi Diagram; Experimental)Google Scholar
  21. 74Uga: Ya.A. Ugay, S.N. Miroshnichenko, and E.G. Goncharov, “Investigation of thep-T-x diagram of the Si−As System,”Izv. Akad. Nauk SSSR Neorg. Mat., 10, 1774–1777 (1974) in Russian. (Equi Diagram, Thermo; Experimental; Indicates presence of a phase diagram)Google Scholar
  22. 75Fai: R.B. Fair and J.C.C. Tsai, “The Diffusion of Ion-Implanted Arsenic in Silicon,”J. Electrochem. Soc., 122, 1689–1696 (1975). (Equi Diagram; Experimental)CrossRefGoogle Scholar
  23. 75Ohk: S. Ohkawa, Y. Nakajima, and Y. Fukukawa, “Arsenic Diffusion into Silicon from Elemental Source,”Jpn J. Appl. Phys., 14, 458–465 (1975). (Equi Diagram; Experimental)CrossRefADSGoogle Scholar
  24. 77Bar: I. Barin, O. Knacke, and O. Kubaschewski,Thermochemical Properties of Inorganic Substances (Supplement), Springer-Verlag, New York (1977). (Thermo; Compilation)Google Scholar
  25. 77Gei: H.-D. Geiler, G. Götz, K.-D. Klinge, and N. Triem, “Investigation of Laser Induced Diffusion and Annealing Processes of Arsenic-Implanted Silicon Crystals,”Phys. Status Solidi (a), 41, K171-K173 (1977). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  26. 77Sud: V.S. Sudavtsova and G.I. Batalin, “Calculation of the Activities of the Components of Liquid Me−Si Alloys from the Phase Diagrams,”Ukr. Khim. Zh., 43, 235–240 (1977) in Russian. (Thermo; Theory)Google Scholar
  27. 78Sri: G.R. Srinivasan, “Kinetics of Lateral Autodoping in Silicon Epitaxy,”J. Electrochem. Soc., 125, 146–151 (1978). (Thermo; Theory)CrossRefGoogle Scholar
  28. 78Ven: T.N.C. Venkatesan, J.A. Golovchenko, J.M. Poate, P. Cowan, and G.K. Celler, “Dose Dependence in the Laser Annealing of Arsenic-Implanted Silicon,”Appl. Phys. Lett., 33, 429–431 (1978). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  29. 79Bel: V.I. Belousov, “Calculation of the Activity Coefficient of Arsenic in Single Crystal Silicon,”Russ. J. Phys. Chem., 53, 1266–1267 (1979). (Thermo; Theory)Google Scholar
  30. 79Lie: A. Lietoila, J.F. Gibbons, T.J. Magee, J. Peng, and J.D. Hong, “Solid Solubility of As in Si as Determined by Ion Implantation and CW Laser Annealing,”Appl. Phys. Lett., 35, 532–534 (1979). (Equi Diagram; Experimental)CrossRefADSGoogle Scholar
  31. 80Fai: R.B. Fair, “Modeling Laser-Induced Diffusion of Implanted Arsenic in Silicon,”Proc. Electrochem. Soc., 80–81, 204–219 (1980). (Meta Phases; Experimental)Google Scholar
  32. 80Whi: C.W. White, S.R. Wilson, B.R. Appleton, and F.W. Young, Jr. “Supersaturated Substitutional Alloys Formed by Ion Implantation and Pulsed Laser Annealing of Group-III and Group-V Dopants in Silicon,”J. Appl. Phys., 51, 738–749 (1980). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  33. Indicates key paper81Uga: Ya.A. Ugay, E.G. Goncharov, N.F. Gladyshev, A.E. Popov, and N. Yu. Inozemtseva, “Tensimetric Study of the Si−As System,”Fiz. Khim. Prots. Polyprovod. Poverkh, 138–144 (1981) in Russian. (Equi Diagram, Thermo; Experimental; Indicates presence of a phase diagram)Google Scholar
  34. 82Gra: T. Graziani, K.T. Short, and J.S. Williams, “Comparison of Solubility Limits and Electrical Activities for Antimony and Arsenic Ion Implanted Silicon,”Phys. Lett., 91A, 231–233 (1982). (Meta Phases; Experimental)ADSGoogle Scholar

Copyright information

© Springer 1985

Authors and Affiliations

  • R. W. Olesinski
    • 1
  • G. J. Abbaschian
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of FloridaGainesville

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