Growth mechanism and quantum confinement effect of silicon nanowires
The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for the growth of Si nanowires and the growth model for different morphologies of Si nanowires are described, and the quantum confinement effect of the Si nanowires is presented.
Keywordsone-dimensional nano-structure Si nawo wires VLS growth mechanism quantum confinement effect
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