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Bulletin of Alloy Phase Diagrams

, Volume 6, Issue 5, pp 445–448 | Cite as

The Sb-Si (Antimony-Silicon) system

  • R. W. Olesinski
  • G. J. Abbaschian
Sb-Si

Keywords

Antimony Solid Solubility Equi Diagram Alloy Phase Diagram Crys Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Cited References

  1. Indicates key paper07Wil: R. S. Williams, “Alloys of Antimony with Manganese, Chromium, Silicon and Tin, of Bismuth with Chromium and Silicon, and of Manganese with Tin and Lead,”Z. Anorg. Chem., 55, 1–33 (1907) in German. (Equi Diagram; Experimental; Indicates presence of a phase diagram)CrossRefGoogle Scholar
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  3. 53Hal: R. N. Hall, “Segregation of Impurities during the Growth of Germanium and Silicon Crystals,”J. Phys. Chem., 57, 836–839 (1953). (Equi Diagram; Experimental)CrossRefGoogle Scholar
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  11. 70Rao: M. V. Rao and W. A. Tiller, “Excess Free Energies in the Ge, Si and Ga Binary Systems—the α-Parameter Approach,”J. Phys. Chem. Solids, 31, 191–198 (1970). (Thermo; Theory)CrossRefGoogle Scholar
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  13. 72Mal: Y. Malmeja, P. Desré, and E. Bonnier, “Contribution to the Ternary Phase Diagram of Ge−Si−Sb,”Mém. Sci. Rev. Métall., 69, 565–577 (1972) in French. (Equi Diagram; Experimental; Indicates presence of a phase diagram)Google Scholar
  14. 73Bar: I. Barin and O. Knacke,Thermochemical Properties of Inorganic Substances, Springer-Verlag, New York (1973). (Thermo; Compilation)Google Scholar
  15. 76Ito: T. Itoh, T. Nakamura, M. Muromachi, and T. Sugiyama, “Antimony Concentration in Silicon Epitaxial Layer Formed by Partially Ionized Vapor Deposition,”Jpn. J. Appl. Phys., 15, 1145–1146 (1976). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  16. 76Mur: A. Murgai, H. C. Gatos, and A. F. Witt, “Quantitative Analysis of Microsegregation in Silicon Grown by the Czochralski Method,”J. Electrochem. Soc., 123, 224–229 (1976). (Equi Diagram; Experimental)CrossRefGoogle Scholar
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  20. 78Jos: W. J. M. J. Josquin and Y. Tamminga, “Rutherford Backscattering Study of Crystal Orientation-Dependent Annealing Effects in High-Dose Antimony Implanted Silicon,”Appl. Phys., 15, 73–78 (1978). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  21. 80Kim: K. M. Kim, “Quantitative Analysis of Microsegregation in the Faceted and Non-Faceted Czochralski Silicon Crystal Growth,”Z. Naturforsch., 35a, 80–84 (1980). (Equi Diagram; Experimental)Google Scholar
  22. 80Whi: C. W. White, S. R. Wilson, B. R. Appleton, and F. W. Young, Jr. “Supersaturated Substitional Alloys Formed by Ion Implantation and Pulsed Laser Annealing of Group-III and Group-V Dopants in Silicon,”J. Appl. Phys., 51, 738–749 (1980). (Meta Phases; Experimental)CrossRefADSGoogle Scholar
  23. 82Gra: T. Graziani, K. T. Short, and J. S. Williams, “Comparison of Solubility Limits and Electrical Activities for Antimony and Arsenic Ion-Implanted Silicon,”Phys. Lett., 91A, 231–233 (1982). (Meta Phases; Experimental)ADSGoogle Scholar

Copyright information

© Springer 1985

Authors and Affiliations

  • R. W. Olesinski
    • 1
  • G. J. Abbaschian
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of FloridaGainesville

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