Bulletin of Alloy Phase Diagrams

, Volume 6, Issue 2, pp 128–130 | Cite as

The In−Si (Indium-Silicon) system

  • R. W. Olesinski
  • N. Kanani
  • G. J. Abbaschian


Solid Solubility Equi Diagram Alloy Phase Diagram Excess Entropy Liquidus Curve 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Cited References

  1. 48Kle: W. Klemm, L. Klemm, E. Hohmann, H. Volk, E. Orlamunder, and H. A. Klein, “Alloying of Elements of Group III with Each Other and with Elements of Group III,”Z. Anorg. Chem., 256, 239–252 (1948). (Equi Diagram; Experimental; Indicates presence of a phase diagram)CrossRefGoogle Scholar
  2. 53Hal: R. N. Hall, “Segregation of Impurities During the Growth of Germanium and Silicon Crystals,”J. Phys. Chem., 57, 836–839 (1953). (Equi Diagram; Experimental)CrossRefGoogle Scholar
  3. 53Thu: C. D. Thurmond, “Equilibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. I,”J. Phys. Chem., 57, 827–830 (1953). (Equi Diagram, Thermo; Theory)CrossRefGoogle Scholar
  4. 54Bur: J. A. Burton, “Impurity Centers in Ge and Si,”Phys., 20, 845–854 (1954). (Equi Diagram; Theory)ADSGoogle Scholar
  5. 57Bac: G. Backenstoss, “Conductivity Mobilities of Electrons and Holes in Heavily Doped Silicon,”Phys. Rev., 108, 1416–1419 (1957). (Equi Diagram; Experimental)CrossRefADSGoogle Scholar
  6. Indicates key paper.60Thu: C. D. Thurmond and M. Kowalchik “Germanium and Silicon Liquidus Curves,”Bell Sys. Tech. J., 39, 169–204 (1960). (Equi Diagram; Experimental)Google Scholar
  7. 60Tru: F. A. Trumbore, “Solid Solubilities of Impurity Elements in Germanium and Silicon,”Bell Sys. Tech. J., 39, 205–233 (1960). (Equi Diagram; Theory)Google Scholar
  8. 70Rao: M. V. Rao and W. A. Tiller, “Excess Free Energies in the Ge, Si, and Ga Binary Systems—the α-Parameter Approach”,J. Phys. Chem. Solids, 31, 191–198 (1970). (Thermo; Theory)CrossRefADSGoogle Scholar
  9. 77Bar: I. Barin, O. Knacke, and O. Kubaschewski,Thermochemical Properties of Inorganic Substances, Springer-Verlag, New York (1977) (Thermo; Compilation)Google Scholar
  10. 77Gir: B. Girault, “Liquidus Curves of Several Silicon-Metal Systems,”C. R. Acad. Sci. Paris, Ser. B, 284, 1–4 (1977). (Equi Diagram; Experimental)Google Scholar
  11. 80Jon: C. E. Jones, D. E. Schafer, M. W. Scott, and R. J. Hager, “Studies of Indium-Doped Silicon,” Honeywell Corporate Materials Science Center, Final Report AD A088736, June (1980).Google Scholar
  12. 80Whi: C. W. White, S. R. Wilson, B. R. Appleton, and F. W. Young, Jr. “Supersaturated Substitutional Alloys Formed by Ion Implantation and Pulsed Annealing of Group-III and Group-V Dopants in Silicon,”J. Appl. Phys., 51, 738–749 (1980). (Meta Phases; Experimental)CrossRefADSGoogle Scholar

Copyright information

© Springer 1985

Authors and Affiliations

  • R. W. Olesinski
    • 1
  • N. Kanani
    • 1
  • G. J. Abbaschian
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of FloridaGainesvilleU.S.A.

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