Bulletin of Alloy Phase Diagrams

, Volume 6, Issue 2, pp 128–130 | Cite as

The In−Si (Indium-Silicon) system

  • R. W. Olesinski
  • N. Kanani
  • G. J. Abbaschian

Cited References

  1. 48Kle: W. Klemm, L. Klemm, E. Hohmann, H. Volk, E. Orlamunder, and H. A. Klein, “Alloying of Elements of Group III with Each Other and with Elements of Group III,”Z. Anorg. Chem., 256, 239–252 (1948). (Equi Diagram; Experimental; Indicates presence of a phase diagram)CrossRefGoogle Scholar
  2. 53Hal: R. N. Hall, “Segregation of Impurities During the Growth of Germanium and Silicon Crystals,”J. Phys. Chem., 57, 836–839 (1953). (Equi Diagram; Experimental)CrossRefGoogle Scholar
  3. 53Thu: C. D. Thurmond, “Equilibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. I,”J. Phys. Chem., 57, 827–830 (1953). (Equi Diagram, Thermo; Theory)CrossRefGoogle Scholar
  4. 54Bur: J. A. Burton, “Impurity Centers in Ge and Si,”Phys., 20, 845–854 (1954). (Equi Diagram; Theory)ADSGoogle Scholar
  5. 57Bac: G. Backenstoss, “Conductivity Mobilities of Electrons and Holes in Heavily Doped Silicon,”Phys. Rev., 108, 1416–1419 (1957). (Equi Diagram; Experimental)CrossRefADSGoogle Scholar
  6. Indicates key paper.60Thu: C. D. Thurmond and M. Kowalchik “Germanium and Silicon Liquidus Curves,”Bell Sys. Tech. J., 39, 169–204 (1960). (Equi Diagram; Experimental)Google Scholar
  7. 60Tru: F. A. Trumbore, “Solid Solubilities of Impurity Elements in Germanium and Silicon,”Bell Sys. Tech. J., 39, 205–233 (1960). (Equi Diagram; Theory)Google Scholar
  8. 70Rao: M. V. Rao and W. A. Tiller, “Excess Free Energies in the Ge, Si, and Ga Binary Systems—the α-Parameter Approach”,J. Phys. Chem. Solids, 31, 191–198 (1970). (Thermo; Theory)CrossRefADSGoogle Scholar
  9. 77Bar: I. Barin, O. Knacke, and O. Kubaschewski,Thermochemical Properties of Inorganic Substances, Springer-Verlag, New York (1977) (Thermo; Compilation)Google Scholar
  10. 77Gir: B. Girault, “Liquidus Curves of Several Silicon-Metal Systems,”C. R. Acad. Sci. Paris, Ser. B, 284, 1–4 (1977). (Equi Diagram; Experimental)Google Scholar
  11. 80Jon: C. E. Jones, D. E. Schafer, M. W. Scott, and R. J. Hager, “Studies of Indium-Doped Silicon,” Honeywell Corporate Materials Science Center, Final Report AD A088736, June (1980).Google Scholar
  12. 80Whi: C. W. White, S. R. Wilson, B. R. Appleton, and F. W. Young, Jr. “Supersaturated Substitutional Alloys Formed by Ion Implantation and Pulsed Annealing of Group-III and Group-V Dopants in Silicon,”J. Appl. Phys., 51, 738–749 (1980). (Meta Phases; Experimental)CrossRefADSGoogle Scholar

Copyright information

© Springer 1985

Authors and Affiliations

  • R. W. Olesinski
    • 1
  • N. Kanani
    • 1
  • G. J. Abbaschian
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of FloridaGainesvilleU.S.A.

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