Air-exposure effect on the resistivity of thin bismuth films
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A survey of previous studies on vacuum deposited metal films shows that in high frequency measurements, explicit reference to the effect of air-exposure is not made. The present work on bismuth films (in-situ and air-exposed) at dc and rf frequencies, carried out mainly to study the air-exposure effect, shows that in-situ dc and rf and exposed rf all show nearly the same resistivity for thick continuous films. But air-exposed dc film resistances, when compared to in-situ dc resistances, show that the grain boundary reflection coefficient, R gin Mayadas-Shatzkes model changes from 0·2 to 0·6. This is shown to be due to the grain boundary oxidation. The result is substantiated by rf measurements.
KeywordsResistivity grain boundary oxidation air-exposure continuous films discontinuous films
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- Anderson J R (Ed) 1971 Chemisorption and reactions on metallic films (Academic Press) Ch. 5Google Scholar
- Drumheller C E 1957 Trans. 4th Natl. Symp. Boston ed. W G Matheson (London: Pergamon) 27Google Scholar
- Drumheller C E 1964 J. Phys. 25 198Google Scholar
- Joglekar A V 1974c Vapour deposited thin films of bismuth and antimony Ph.D. Thesis Poona Univ.Google Scholar
- Maissel L I 1962 Proc. 9th Natl. Vac. Symp. 169 Google Scholar
- Maisel L I and Glang 1971 Handbook of Thin Film Technology Chap. 13, $S 3bGoogle Scholar
- Pande M K 1976 Studies on microstrip circuits with special reference to thin film Bi 2O3 overlay Ph.D. Thesis Poona Univ.Google Scholar