, Volume 17, Issue 6, pp 453–459 | Cite as

Air-exposure effect on the resistivity of thin bismuth films

  • S A Gangal
  • R N Karekar
Solid State Physics


A survey of previous studies on vacuum deposited metal films shows that in high frequency measurements, explicit reference to the effect of air-exposure is not made. The present work on bismuth films (in-situ and air-exposed) at dc and rf frequencies, carried out mainly to study the air-exposure effect, shows that in-situ dc and rf and exposed rf all show nearly the same resistivity for thick continuous films. But air-exposed dc film resistances, when compared to in-situ dc resistances, show that the grain boundary reflection coefficient, R gin Mayadas-Shatzkes model changes from 0·2 to 0·6. This is shown to be due to the grain boundary oxidation. The result is substantiated by rf measurements.


Resistivity grain boundary oxidation air-exposure continuous films discontinuous films 


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Copyright information

© Indian Academy of Sciences 1981

Authors and Affiliations

  • S A Gangal
    • 1
  • R N Karekar
    • 1
  1. 1.Department of PhysicsUniversity of PoonaPuneIndia

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