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Pramana

, Volume 17, Issue 6, pp 453–459 | Cite as

Air-exposure effect on the resistivity of thin bismuth films

  • S A Gangal
  • R N Karekar
Solid State Physics

Abstract

A survey of previous studies on vacuum deposited metal films shows that in high frequency measurements, explicit reference to the effect of air-exposure is not made. The present work on bismuth films (in-situ and air-exposed) at dc and rf frequencies, carried out mainly to study the air-exposure effect, shows that in-situ dc and rf and exposed rf all show nearly the same resistivity for thick continuous films. But air-exposed dc film resistances, when compared to in-situ dc resistances, show that the grain boundary reflection coefficient, R gin Mayadas-Shatzkes model changes from 0·2 to 0·6. This is shown to be due to the grain boundary oxidation. The result is substantiated by rf measurements.

Keywords

Resistivity grain boundary oxidation air-exposure continuous films discontinuous films 

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Copyright information

© Indian Academy of Sciences 1981

Authors and Affiliations

  • S A Gangal
    • 1
  • R N Karekar
    • 1
  1. 1.Department of PhysicsUniversity of PoonaPuneIndia

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