Abstract
The diffusion of Zn into GaAs at low temperature has been investigated. The experiments are carried out in an evacuated and sealed quartz ampoule using ZnAs2 as the source of Zn.
The relation among the junction depth (X j), the time (t) and the temperature (T) of diffusion has been investigated. It is found that the sheet resistance (R s) of diffusion layer increases asX j decreases. The surface concentration (C s) decreases as 1/T increases, and mobility (μ) decreases asC s increases. TheC s versus 1/X j·Rs) are plotted, the results are thatC s increases as 1/X j ·R s ) increases. This is a simple method for determiningC s of the multiple GaAs/GaA1As epitaxial layer. The mechanism of Zn diffusion in GaAs and InP is discussed. This process has been applied to fabricate GaAs/GaAlAs double heterojunction light emitting diodes and an output power of 2—4mW is obtained, the series resistance is 3—5Q.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
K. K. Shih, et al.,J. Electrochem. Soc.,123 (1977), 1739.
A. Flat, et al.,Solid State Electron,20 (1977), 1024.
H. C. Casey,Trans. AIME,242 (1968), 406.
C. H. Tang,J. Electrochem. Soc.,118 (1971), 1454.
L. Kenneth,J. Electrochem. Soc.,116 (1969), 507.
H. F. Mataré, Advances in Electronics and Electron Physics, Ed. by L. Marton, Vol. 42 (1976), p. 246.
P. K. Tien, et al.,Appl. Phys. Lett.,34 (1979), 701.
B. Tuck, et al., Inst. Phys. Conf. Ser. 33a, Chap. 3, D10, (1977), p. 2473.
Author information
Authors and Affiliations
About this article
Cite this article
Guicheng, Z., Ziping, F. The diffusion of Zn in GaAs at low temperature. J. of Electron. (China) 1, 46–52 (1984). https://doi.org/10.1007/BF02824098
Issue Date:
DOI: https://doi.org/10.1007/BF02824098