Journal of Electronic Materials

, Volume 9, Issue 5, pp 869–882 | Cite as

Energy bandgap and lattice constant contours of II–VI quaternary alloys

  • Toshiyuki Ido
Article
Received:
Revised:

Abstract

Energy bandgap and lattice constant contours of A1−x Bx C1−y Dy and AB1−x−y Cx Dy II-VI quaternary alloys were calculated by the interpolation method using ternary alloy parameters. Three interpolation methods were applied to A1−x Bx C1−y Dy alloy systems. The maximum energy differences between the three methods, which occur near the center of the composition plane, are 0.14, 0.24, and 0.33 eV for (ZnCd)(SSe), (ZnCd)(SeTe), and (ZnCd)(STe) alloy systems, respectively. The calculated results are compared with two sources of experimental data and were fitted within 0.23 eV for all the three methods. For AB1−x−y Cx Dy alloy systems the calculated results based on two interpolation methods agreed very well within 0.03 eV.

Key words

quaternary alloys bandgap lattice constant 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    A. Onton and R. J. Chicotka, International Conf. on Luminescence, Leningrad, 1972.Google Scholar
  2. 2.
    K. Oe, S. Ando, and K. Sugiyama, Japan. J. Appl. Phys.16, 1273 (1977).CrossRefGoogle Scholar
  3. 3.
    C. C. Shen, J. J. Hsieh, and T. A. Lind, Appl. Phys. Letters30, 353 (1977).CrossRefGoogle Scholar
  4. 4.
    H. Nagai and Y. Noguchi, J. Appl. Phys.47, 5484 (1976).CrossRefGoogle Scholar
  5. 5.
    R. E. Nahory, M. A. Pollack, and J. C. Dewinter, J. Appl. Phys.48, 320 (1977).CrossRefGoogle Scholar
  6. 6.
    A. Congiu, P. Manca, and A. Spiga, Nuovo Cimento5B, 204 (1971).Google Scholar
  7. 7.
    H. Tai and S. Hori, Nippon Kinzoku Gakkaishi41, 33 (1977).Google Scholar
  8. 8.
    R. L. Moon, G. A. Antypas, and L. W. James, J. Electron. Mater.3, 635 (1974).CrossRefGoogle Scholar
  9. 9.
    T. H. Glisson, J. R. Hauser, M. A. Littlejohn, and C. K. Williams, ibid.7, 1 (1978).CrossRefGoogle Scholar
  10. 10.
    Y. S. Park and B. K. Shin,Electroluminescence, Ed. J. I. Pankove (Springer-verlag, Berlin 1977), p. 135Google Scholar
  11. 11.
    H. Yanai (Ed.),Semiconductors Handbook (Revised ed.) (Ohm-sha, Tokyo 1977), p. 9 and 157.Google Scholar
  12. 12.
    A. Ebina, E. Fukunaga, and T. Takahashi, Phys. Rev.B10, 2495 (1974).Google Scholar
  13. 13.
    A. Ebina, M. Yamamoto, and T. Takahashi, Phys. Rev.B6, 3786 (1972).Google Scholar
  14. 14.
    R. Hill and A. H. Lettington, Solid State Commun.18, 335 (1976).CrossRefGoogle Scholar
  15. 15.
    R. Hill, J. Phys.C7, 521 (1974).Google Scholar
  16. 16.
    K. Saito, Doctoral Thesis (Tohoku Univ. 1973).Google Scholar
  17. 17.
    K. Ohta, J. Saraie, and T. Tanaka, Japan. J. Appl. Phys.12, 1641 (1973).CrossRefGoogle Scholar

Copyright information

© The Minerals, Metals & Materials Society 1980

Authors and Affiliations

  • Toshiyuki Ido
    • 1
  1. 1.Department of Electrical EngineeringChubu Institute of TechnologyNagoya-shigaiJapan

Personalised recommendations