Journal of Electronics (China)

, Volume 7, Issue 1, pp 70–76 | Cite as

Investigation on resonant tunneling in GaAs/AlxGa1-xAs DBD using tunneling spectroscopy

  • Chen Hongyi
  • K. L. Wang
Article

Abstract

Experimental investigation on resonant tunneling in various GaAs/AlxGa1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The results show that in addition to resonant tunneling via GaAs well state confined by AlxGa1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by AlxGa1-xAsX-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases.

Key words

Resonant tunneling Quantum well Energy band profile 

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Copyright information

© Science Press 1990

Authors and Affiliations

  • Chen Hongyi
    • 1
  • K. L. Wang
    • 2
  1. 1.Institute of MicroelectronicsTsinghua UniversityBeijing
  2. 2.Device Research Laboratory, Electrical Engineering DepartmentUniversity of California at Los AngelesLos AngelesU.S.A.

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