Journal of Electronics (China)

, Volume 7, Issue 1, pp 70–76 | Cite as

Investigation on resonant tunneling in GaAs/AlxGa1-xAs DBD using tunneling spectroscopy

  • Chen Hongyi
  • K. L. Wang


Experimental investigation on resonant tunneling in various GaAs/AlxGa1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The results show that in addition to resonant tunneling via GaAs well state confined by AlxGa1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by AlxGa1-xAsX-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases.

Key words

Resonant tunneling Quantum well Energy band profile 


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  1. [1]
    L. L. Chang, L. Esaki, R. Tsu,Appl. Phys. Lett.,24(1974)12, 593.CrossRefGoogle Scholar
  2. [2]
    M. A. Reed, J. W. Lee, H-L. Tsai,Appl. Phys. Lett.,49(1986)3, 158.CrossRefGoogle Scholar
  3. [3]
    C. I. Huang, M. J. Paulus et al.,Appl. Phys. Lett.,51(1987)2, 121.CrossRefGoogle Scholar
  4. [4]
    E. E. Mendez, E. Calleja et al.,Phys. Rev.,B33(1986), 7368.CrossRefGoogle Scholar
  5. [5]
    A. R. Bonnefoi, T. C. McGill,Appl. Phys. Lett.,50(1987)6, 344.CrossRefGoogle Scholar
  6. [6]
    P. B. Kirly, T. M. Kerr,Appl. Phys. Lett.,50(1987)25, 1808.CrossRefGoogle Scholar
  7. [7]
    A. G. Thompson, J. C. Woolley,Can. J. Phys.,45(1967), 255.Google Scholar
  8. [8]
    H. C. Casey, M. B. Panish,J. Appl. Phys.,40(1969)12, 4910.CrossRefGoogle Scholar
  9. [9]
    William R. Patterson,Rev. Sci. Instru.,35(1964), 1704.CrossRefGoogle Scholar
  10. [10]
    H. Ohaishi, T. Inata et al.,Appl. Phys. Lett.,49(1986)19, 1248.CrossRefGoogle Scholar
  11. [11]
    M. Cahay, M. McLennan et al.,Appl. Phys. Lett.,50(1987)10, 612.CrossRefGoogle Scholar
  12. [12]
    J. Ihm,Appl. Phys. Lett.,50(1987)16, 1068.CrossRefGoogle Scholar

Copyright information

© Science Press 1990

Authors and Affiliations

  • Chen Hongyi
    • 1
  • K. L. Wang
    • 2
  1. 1.Institute of MicroelectronicsTsinghua UniversityBeijing
  2. 2.Device Research Laboratory, Electrical Engineering DepartmentUniversity of California at Los AngelesLos AngelesU.S.A.

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