Russian Microelectronics

, Volume 29, Issue 4, pp 219–234 | Cite as

Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted silicon

  • M. I. Makoviichuk


Flicker noise spectroscopy in disordered semiconductors is gaining wide acceptance both in physical investigation and in analysis of various microelectronics processes. Its successful use as a diagnostic tool in microtechnology is a result of advances in fundamental studies of flicker noise in semiconductors with disordered structure. In this work, we systematize experimental data for flicker noise phenomena in disordered semiconductors, specifically, in ion-implanted silicon


Noise Intensity RUSSIAN Microelectronics Space Charge Region Flicker Noise Sheet Resistivity 
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© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • M. I. Makoviichuk
    • 1
  1. 1.Institute of Microelectronics and InformaticsRussian Academy of SciencesYaroslavlRussia

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