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Russian Microelectronics

, Volume 29, Issue 2, pp 113–116 | Cite as

Investigation of Ti-Ge/GaAs Schottky barrier contacts

  • A. P. Bibilashvili
  • A. B. Gerasimov
  • Z. D. Samadashvili
  • L. G. Chopozov
Article
  • 59 Downloads

Abstract

The effect of germanium content in a titanium film, as well as treatment methods and conditions, on the Schottky barrier height (φb) and the ideality factor (n) for Ti-Ge / GaAs contacts were investigated. It is shown that photon treatment provides better contacts than thermal treatment.

Keywords

GaAs Schottky Barrier Ideality Factor RUSSIAN Microelectronics Schottky Barrier Height 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • A. P. Bibilashvili
    • 1
  • A. B. Gerasimov
    • 1
  • Z. D. Samadashvili
    • 1
  • L. G. Chopozov
    • 1
  1. 1.Dzhavakhishvili State University of TbilisiTbilisiGeorgia

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