Russian Microelectronics

, Volume 29, Issue 2, pp 113–116 | Cite as

Investigation of Ti-Ge/GaAs Schottky barrier contacts

  • A. P. Bibilashvili
  • A. B. Gerasimov
  • Z. D. Samadashvili
  • L. G. Chopozov


The effect of germanium content in a titanium film, as well as treatment methods and conditions, on the Schottky barrier height (φb) and the ideality factor (n) for Ti-Ge / GaAs contacts were investigated. It is shown that photon treatment provides better contacts than thermal treatment.


GaAs Schottky Barrier Ideality Factor RUSSIAN Microelectronics Schottky Barrier Height 
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Copyright information

© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • A. P. Bibilashvili
    • 1
  • A. B. Gerasimov
    • 1
  • Z. D. Samadashvili
    • 1
  • L. G. Chopozov
    • 1
  1. 1.Dzhavakhishvili State University of TbilisiTbilisiGeorgia

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