Journal of Superconductivity

, Volume 10, Issue 3, pp 221–226 | Cite as

Comparison of high-pressure dc-sputtering and pulsed laser deposition of superconducting YBa2Cu3O x thin films

  • P. B. Mozhaev
  • P. V. Komlssinski
  • N. P. Kukhta
  • A. Kühle
  • G. A. Ovsyannikoy
  • J. L. Skov
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Abstract

Superconducting YBa2Cu3Ox thin films were deposited on NdGaO3 (110) substrates using two different techniques: dc sputtering at high oxygen pressure and pulsed laser deposition. The structure, electrical properties, and surface morphology of the obtained films were compared. The superior crystal quality of dc-sputtered films fabricated at the same temperature and at oxygen pressure of the same range as for laser-deposited films can be explained by a lower deposition rate providing time for recrystallization processes. The re-evaporation becomes significant for dc sputtering at high deposition temperatures and results in Badeficient films. The high mobility of atoms on the surface of the growing film during laser deposition helps in the formation of smoothc-oriented areas of the film.

Key Words

Pulsed laser deposition high-pressure dc-sputtering thin film growth 
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Copyright information

© Plenum Publishing Corporation 1997

Authors and Affiliations

  • P. B. Mozhaev
    • 1
    • 2
  • P. V. Komlssinski
    • 1
  • N. P. Kukhta
    • 1
  • A. Kühle
    • 2
  • G. A. Ovsyannikoy
    • 1
  • J. L. Skov
    • 2
  1. 1.Institute of Radio Engineering and ElectronicsRussian Academy of SciencesMoscowRussia
  2. 2.Physics DepartmentTechnical University of DenmarkLyngbyDenmark

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