Inorganic Materials

, Volume 36, Issue 5, pp 426–428 | Cite as

Copper-related deep acceptor in heat-treated Ge1-xSix single crystals

  • P. G. Azhdarov
Article
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Abstract

Hall measurements demonstrate that Cu-doped Ge1-xSix (0 ≤x ≤ 0.15) single crystals quenched after heat treatment at 700–720°C contain a new deep acceptor. The ionization energy of this acceptor is linear in silicon content, EDA (x) = 0.08 + 0.63x eV. Annealing the Ge1-xSix crystals at 260–270°C leads to the disappearance of the deep acceptors and an equivalent increase in the concentration of shallow acceptors related to substitutional copper. The deep acceptor consists most likely of a substitutional copper atom and a mobile defect, presumably a vacancy or a copper, carbon, or oxygen interstitial.

Keywords

Germanium Ionization Energy Acceptor Level Azerbaijan Hole Concentration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© MAIK “Nauka/Interperiodica” 2000

Authors and Affiliations

  • P. G. Azhdarov
    • 1
  1. 1.Abdullaev Institute of PhysicsAcademy of Sciences of AzerbaijanBakuAzerbaijan

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