Bulletin of Materials Science

, Volume 20, Issue 4, pp 531–534 | Cite as

Electrical resistivity and point contact studies on Al-Pd-Mn icosahedral quasicrystals

  • N Gayathri
  • R Goswami
  • S Banerjee


We report measurement of the electrical resistivityρ(T) and point contact differential conductance (dI/dV) for icosahedral Al70Pd30 −x (x=7,9 and 11) at low temperatures. Below 10 K, forx=11,ρ(T) follows a logT dependence. All the three compositions show a sharp minimum in the differential conductance near zero bias. Magnitude of the dip in the point contact conductance increases as the Mn concentration increases. The dip near zero bias also follows a logV dependence forV < 30 mV.


Electrical resistivities point contact studies Al-Pd-Mn 


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Copyright information

© the Indian Academy of Sciences 1997

Authors and Affiliations

  • N Gayathri
    • 1
  • R Goswami
    • 1
    • 2
  • S Banerjee
    • 1
    • 2
  1. 1.Department of PhysicsIndian Institute of ScienceBangaloreIndia
  2. 2.Department of MetallurgyIndian Institute of ScienceBangaloreIndia

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