Abstract
A new method ofrf sputtering by which thin films of metals, semiconductors and insulators can be sputtered from their respective powders, has been successfully demonstrated. The films have been characterized for their surface and crystal structure using conventional methods ofsem andtem. All the films are amorphous with a relatively smooth surface topography. The relative merits and demerits of the technique have been briefly discussed.
Keywords
rf sputtering target shield Crookes dark space amorphous films scanning electron microscopy transmission electron microscopyPreview
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© Indian Academy of Sciences 1984