Korean Journal of Chemical Engineering

, Volume 21, Issue 1, pp 292–295 | Cite as

Structural and optical properties of InGaN/GaN triangular-shape quantum wells with different threading dislocation densities

  • Rak Jun Choi
  • Hyung Jae Lee
  • Yoon-Bong HahnEmail author
  • Hyung Koun Cho


Structural and optical properties of InGaN/GaN multiple triangular quantum well (QW) structures with different threading dislocation (TD) densities of 1.5×108 (sample A) and 4.5×108 cm-2 (sample B) have been studied. High resolution transmission electron microscopy and x-ray diffraction analysis showed more fluctuation of local In composition in the sample B, which was attributed to the stress field created by the dislocations as it provides a driving force for the migration of In atoms towards dislocations. Severe degradation of photoluminescence intensity of the sample B was also observed at < 50 K. The optical and structural properties of the InGaN/GaN triangular QW structures are overall substantially affected by the TD density.

Key words

InGaN/GaN Multiple Quantum Wells Light-emitting Diodes Threading Dislocation 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., “Spontaneous Emission of Localized Excitons in InGaN Single and Multiquantum Well Structures,”Appl. Phys. Lett.,69, 4188 (1996).CrossRefGoogle Scholar
  2. Cho, Y.H., Gainer, G.H., Fischer, A. J., Song, J. J., Keller, S., Mishra, U.K. and Denaars, S. P., “S-shaped Temperature-dependent Emission Shift and Carrier Dynamics in InGaN/GaN Multiple Quantum Wells,”Appl. Phys. Lett.,73, 1370 (1998).CrossRefGoogle Scholar
  3. Choi, R. J., Shim, H.W., Jeong, S. M., Yoon, H. S., Suh, E.-K., Hong, C.-H., Lee, H. J. and Kim, Y.W., “Triangular Quantum Well of InGaN-GaN for Active Layer of Light-Emitting Device,”Phys. Stat. Sol.,192(2), 430 (2002).CrossRefGoogle Scholar
  4. Choi, R. J., Shim, H.W., Han, M. S., Suh, E.-K., Lee, H. J. and Hahn, Y. B., “Efficient Blue Light-emitting Diodes with InGaN/GaN Triangular Shaped Multiple Quantum Wells,”Appl. Phys. Lett.,82, 2764 (2002).CrossRefGoogle Scholar
  5. Choi, R. J., Hahn, Y. B., Shim, H.W., Suh, E.K., Hong, C.-H. and Lee, H. J., “Improvement of Electrical and Optical Properties of InGaN/ GaN-Based Light-Emitting Diodes with Triangular Quantum Well Structure,”Korean J. Chem. Eng.,20, 1134 (2003).CrossRefGoogle Scholar
  6. Garni, B., Ma, J., Perkins, N., Liu, J., Kuech, T. F. and Lagally, M.G., “Scanning Tunneling Microscopy and Tunneling Luminescence of the Surface of GaN Films Grown by Vapor Phase Epitaxy,”Appl. Phys. Lett.,68, 1380 (1996).CrossRefGoogle Scholar
  7. Heying, B., Wu, X.H., Keller, S., Li, Y., Kapolnek, D., Keller, B. P., Denbaars, S. P. and Speck, J. S., “Role of Threading Dislocation Structure on the x-ray Diffraction Peak Widths in Epitaxial GaN Films,”Appl. Phys. Lett.,68, 643 (1996).CrossRefGoogle Scholar
  8. Jain, S. C., Willander, M., Narayan, J. and Overstraeten, R.V., “III-nitrides: Growth, Characterization, and Properties,”J. Appl. Phys.,87, 965 (2000).CrossRefGoogle Scholar
  9. Kapolnek, D., Wu, X. H., Heying, B., Keller, S., Keller, B., Mishra, U. K., Denbaars, S. P. and Spect, J. S., “Structural Evolution in Epitaxial Metalorganic Chemical Vapor Deposition Grown GaN Films on Sapphire,”Appl. Phys. Lett.,67, 1541 (1995).CrossRefGoogle Scholar
  10. Kim, I.-H., Park, H.-S., Park, Y.-I. and Kim, T., “Formation of V-shaped Pits in InGaN/GaN Multiquantum Wells and Bulk InGaN Films,”Appl. Phys. Lett.,73, 1634 (1998).CrossRefGoogle Scholar
  11. Krost, A., Bohrer, J., Dadgar, A., Schnabel, R. F., Hansmann, B. S. and Burkhard, H., “High-resolution x-ray Analysis of Compressively Strained 1.55μm GaInAs/AlGaInAs Multiquantum Well Structures Near the Critical Thickness,”Appl. Phys. Lett.,67, 3325 (1995).CrossRefGoogle Scholar
  12. Lester, S. D., Ponce, F.A., Craford, M. G. and Steigerwald, D.A., “High Dislocation Densities in High Efficiency GaN-based Light-emitting Diodes,”Appl. Phys. Lett.,66, 1249 (1995).CrossRefGoogle Scholar
  13. Pearton, S. J., Zolper, J. C., Shul, R. J. and Ren, F., “GaN: Processing, Defects, and Devices,”J. Appl. Phys.,86, 1 (1999).CrossRefGoogle Scholar
  14. Qian, W., Rohrer, G. S., Skowronski, M., Doverspike, K., Rowland, L.B. and Gaskill, D.K., “Open-core Screw Dislocations in GaN Epilayers Observed by Scanning Force Microscopy and High-resolution Transmission Electron Microscopy,”Appl. Phys. Lett.,67, 2284 (1995).CrossRefGoogle Scholar
  15. Rosner, S. J., Carr, E. C., Ludowise, M. J., Girolami, G. and Erikson, H. I., “Correlation of Cathodoluminescence Inhomogeneity with Microstructural Defects in Epitaxial GaN Grown by Metalorganic Chemical-vapor Deposition,”Appl. Phys. Lett.,70, 420 (1997).CrossRefGoogle Scholar
  16. Strite, S. and Morkoc, H., “GaN, AlN, and InN: A Review,”J. Vac. Sci. Technol. B,10, 1237 (1992).CrossRefGoogle Scholar
  17. Weimann, N.G., Eastman, L. F., Doppalapudi, D., Ng, H. M. and Moustakas, T.D., “Scattering of Electrons at Threading Dislocations in GaN,”J. Appl. Phys.,83, 3656 (1998).CrossRefGoogle Scholar

Copyright information

© Korean Institute of Chemical Engineering 2004

Authors and Affiliations

  • Rak Jun Choi
    • 1
  • Hyung Jae Lee
    • 1
  • Yoon-Bong Hahn
    • 1
    Email author
  • Hyung Koun Cho
    • 1
    • 2
  1. 1.School of Chemical Engineering and Technology and Semiconductor Physics Research CenterChonbuk National UniversityChonjuKorea
  2. 2.Department of Metallurgical EngineeringDong-A UniversityBusanKorea

Personalised recommendations