Korean Journal of Chemical Engineering

, Volume 18, Issue 3, pp 342–346 | Cite as

Evaluation of citric acid added cleaning solution for removal of metallic contaminants on Si wafer surface

  • Hye-Young Chung
  • Kyung-Soo Kim
  • Hyo-Yong Cho
  • Bo-Young Lee
  • Hak-Do Yoo
  • Sang-Hak Lee
Article
Received:
Accepted:
  • 163 Downloads

Abstract

We have investigated cleaning solutions based on citric acid (CA) to remove metallic contaminants from the silicon wafer surface. Silicon wafers were intentionally contaminated with Fe, Ca, Zn, Na, Al and Cu standard solution by spin coating method and cleaned in various CA-added cleaning solutions. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). And the surface micro-roughness was also measured by atomic force microscopy (AFM) to evaluate the effect of cleaning solutions. It was found that acidic CA/H2O solution has the ability to remove metallic contaminants from silicon surfaces. Fe, Ca, Zn and Na on silicon surface were decreased from the order of 1012 atoms/cm2 to the order of 109 atoms/cm2 even at low CA concentration, low temperature of CA solution and with short immersion time. CA was also effective in alkali cleaning solution. Fe, Ca, Zn, Na and Cu were reduced down to the order of 109 atoms/cm2 in CA added with NH4OH/H2O2/H2O solution without degradation of surface micro-roughness.

Key words

Citric Acid Si Wafer Metallic Contaminants Vapor Phase Decomposition 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Chung, S. P., Chang, K. H., Lee, K. T., Kwon, Y. M., Hah, S. R., Moon, J. T. and Lee, S. I.,“Evaluation of Chelate added APM Cleaning Solution,”The Electrochemical Society Proceedings Series, PV 99-36, 114 (2000).Google Scholar
  2. Hall, L. H., Sees, J. A. and Schmidt, B. L.,“Characterization and Application of the Vapor Phase Decomposition Technique for Trace Metal Analysis on Silicon Oxide Surfaces,”SURFACE AND INTER-FACE ANALYSIS,24, 511 (1996).CrossRefGoogle Scholar
  3. Hourai, M., Naridomi, T., Oka, Y., Murakami, K., Sumita, S., Fujino, N. and Shirawa, T.“A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer,”Jpn. J. Appl. Phys.,12, L2361 (1988).CrossRefGoogle Scholar
  4. Kern, W.,“Handbook of Semiconductor Wafer Cleaning Technology,” Noyes Publications, New Jersey (1992).Google Scholar
  5. Kern, W.,“The Evolution of Silicon Wafer Cleaning Technology,”J. Electrochem. Soc.,137, 1887 (1990).CrossRefGoogle Scholar
  6. Kim, C. K., Chung, C. H. and Moon, S. H.,“Removal of Organic Impurities from the Silicon Surface by Oxygen and UV Cleaning,”Korean J. Chem. Eng.,13, 328 (1996).Google Scholar
  7. Leowenstein., L. M. and Mertens., P. W.,“Competitive Adsorption of Cations onto Silicon Surface,”/Electrochem. Soc.,146, 3886 (1999).CrossRefGoogle Scholar
  8. Mertens, P. W., Loewentein, L. M., Vos, R., De Gendt, S., Bearda, T. and Heyns, M. M.,“Wafer Cleaning: A Quantifiable Process Step,”The Electrochemical Society Proceedings Series, PV 98-1,592 (1998).Google Scholar
  9. Mori, Y., Uemura, K. and Shimanoe, K,“Adsorption Species of Transition Metal Ions on Silicon Wafer in SC-1 Solution,”J. Electrochem. Soc.,142, 3104 (1995).CrossRefGoogle Scholar
  10. Morinaga, H. and Ohmi, T.,“Electrochemical Deposition and Removal of Metallic Impurities on Si Substrates,”The Electrochemical Society Proceedings Series, PV 95-20,257 (1995).Google Scholar
  11. Morinaga, H., Aoki, M., Maeda, T., Fujisue, M., Tanaka, H. and Toyoda, M.“Advanced Alkali Cleaning for Simplification of Semiconductor Cleaning Process,” Proceeding of Material Research Society 1997 Spring Meetings, Symposium P (The Science and Technology of Semiconductor Surface Preparation), 35 (1997).Google Scholar
  12. Morita, H., Joo, J. D., Messoussi, R., Kawada, K., Kim, J. S. and Ohmi, T.,“Passivation of Cu Particles on Si Substrate by FOM(HF+O3- UPW) Solution,”The Electrochemical Society Proceedings Series, PV 97-35,147 (1995).Google Scholar
  13. Mouche, L., Tardif, F. and Derrien, J.,“Mechanism of Metallic Impurity Deposition on Silicon Sunstrates Dipped in Cleaning Solution,”J. Electrochem. Soc.,142, 2395 (1995).CrossRefGoogle Scholar
  14. Ohmi, T., Imaoka, T., Kezuka, T., Takano, J. and Kogure, M.,“Segregation and Removal of Metallic Impurity of Interface of Silicon and Fluorine Etchant,”J. Electrochem. Soc.,140, 811 (1993).CrossRefGoogle Scholar
  15. Ohmi, T.,“Total Room Temperature Wet Cleaning for Si Substrate Surface,”J. Electrochem. Soc.,143, 2957 (1996).CrossRefGoogle Scholar
  16. Ridley, R. S., Grebs, Sr., T., Trost, J., Webb, R., Schuler, M., Longenberger, R. F., Fenstemacher, T. and Caravaggio, M.,“Advanced Aqueous Wafer Cleaning in Power Semiconductor Device Manufacturing,” 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 235 (1998).Google Scholar
  17. Shiramizu, Y., Watanabe, K., Tanaka, M., Aoki, H. and H. Kitajima,“Removal of Metal and Organic Contaminants from Silicon Substrates Using Electrolysis-Ionized Water Containing Ammonium Chloride,”J. Electrochem. Soc.,143, 1632 (1996).CrossRefGoogle Scholar

Copyright information

© Korean Institute of Chemical Engineering 2001

Authors and Affiliations

  • Hye-Young Chung
    • 1
  • Kyung-Soo Kim
    • 1
  • Hyo-Yong Cho
    • 1
  • Bo-Young Lee
    • 1
  • Hak-Do Yoo
    • 1
  • Sang-Hak Lee
    • 1
    • 2
  1. 1.R & D Center, LG Siltron Inc.KyungbukKorea
  2. 2.Department of ChemistryKyungpook National UniversityDaeguKorea

Personalised recommendations