Journal of Electronic Materials

, Volume 35, Issue 5, pp 840–845 | Cite as

Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001)

  • Amit Chugh
  • S. Ramachandran
  • A. Tiwari
  • J. Narayan


We report the epitaxial growth and properties of ZnO-Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001) substrates fabricated by using the pulsed laser deposition (PLD) technique. Heteroepitaxial growth of these structures was accomplished by using domain-matching epitaxy. The heterostructures were characterized using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), optical transmittance, photoluminescence, and electrical resistivity measurements. XRD and HRTEM experiments revealed the epitaxial nature of these structures, with orientation relationship between ZnO and Pt, as [0001]ZnO∥[111]Pt and [\(\bar 2\)110]ZnO∥[011]Pt, which is equivalent to no rotation between ZnO and Pt. For Pt epitaxy on (0001) sapphire, the epitaxial relationship was determined to be [001]Pt∥[0001]Sap and [110]Pt∥[01\(\bar 1\)0]Sap, which is equivalent to a 30° rotation in the basal plane. Electrical and optical measurements showed that these heterostructures exhibit very high electrical conductivity and at the same time possess interesting optical transmittance spectra and exhibit room temperature photoluminescence characteristics.

Key words

Domain matching epitaxy ZnO Pt nanodot composites 


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Copyright information

© TMS-The Minerals, Metals and Materials Society 2006

Authors and Affiliations

  • Amit Chugh
    • 1
  • S. Ramachandran
    • 1
  • A. Tiwari
    • 1
  • J. Narayan
    • 1
  1. 1.NSF Center for Advanced Materials and Smart Structures, Department of Materials Science & EngineeringNorth Carolina State UniversityRaleigh

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