Journal of Applied Spectroscopy

, Volume 65, Issue 4, pp 598–603 | Cite as

Optical-absorption spectrum of silicon containing internal elastic stresses

  • A. A. Patrin
  • M. I. Tarasik
Article

Abstract

The spectrum of the coefficient of optical absorption in silicon in the presence of internal (elastic, mechanical) stresses is calculated. Band splitting, including the weight factor of the split subbands, is allowed for. An ordinary equation for the optical-absorption coefficient is obtained by allowing for a correction that reflects the real relation between the energy of quantum pulses and the actual forbidden gap. The results obtained can be used in practice for assessing the internal stresses of silicon crystals and structures as well as for diagnostics of recombination parameters of imperfect silicon.

Key words

silicon internal elastic stresses optical-absorption coefficient 

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Copyright information

© Plenum Publishing Corporation 1998

Authors and Affiliations

  • A. A. Patrin
    • 1
  • M. I. Tarasik
    • 2
  1. 1.Institute of ElectronicsKoszalin Politechnic InstitutePoland
  2. 2.Belarusian State UniversityMinsk

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