Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation
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We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed GexSi1−x films grown on Si(100) substrates. The ion range is such that the Si/GexSi1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed GexSi1−x layers of similar x for irradiation doses up to 2.5 × 1014 Si/cm2 is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed.
Key wordsGeSi irradiation damage Si ion irradiation
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