Journal of Electronic Materials

, Volume 23, Issue 6, pp 493–496 | Cite as

Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator

  • D. Feijóo
  • J. C. Bean
  • L. J. Peticolas
  • L. C. Feldman
  • W. C. Liang
Article
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Revised:

Abstract

The etch rate in ethylene diamine pyrocatechol of Si1-xGe1-x (0.2 ≤ x< - 0.3) etch stops grown by molecular beam epitaxy was determined using Rutherford backscattering spectrometry. Etch rate selectivities as high as 390 were measured. Such etch stops allow for higher bonding temperatures than those possible with currently used boron-based etch stops. Defect etching was used to determine the maximal thickness of dislocation-free layers.

Key words

Bonded and etchback silicon-on-insulator (BE-SOI) etch stop ethylene diamine pyrocatechol silicon-on-insulator SiGe wafer bonding 
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Copyright information

© The Mineral, Metal & Materials Society,Inc. 1994

Authors and Affiliations

  • D. Feijóo
    • 1
  • J. C. Bean
    • 1
  • L. J. Peticolas
    • 1
  • L. C. Feldman
    • 1
  • W. C. Liang
    • 1
  1. 1.AT&T Bell LaboratoriesMurray Hill

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