Journal of Phase Equilibria

, Volume 13, Issue 6, pp 624–628 | Cite as

The Al-As-Ga system

Aluminum-Arsenic-Gallium
  • I. Ansara
Article

Keywords

Phase Diagram GaAs Gallium Arsenide Liquid Phase Epitaxy Ternary Phase Diagram 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Cited References

  1. 66BIa:.
    J.F. Black and S.M. Ku, “Preparation and Properties of AlAs-GaAs Mixed Crystals,”J. Electrochem. Soc, 113, 249–254 (1966). (Experimental;*)CrossRefGoogle Scholar
  2. 69Ile:.
    M. Ilegems and G.L. Pearson, “Derivation of the Ga-Al-As Ternary Phase Diagram with Application to Liquid Phase Epitaxy,”Proceeding 2nd International Symposium Gallium Arsenide, Inst. Phys. and the Phys. Soc. London, U.K., 3–10 (1969). (Theory;#)Google Scholar
  3. 69Pan:.
    M.B. Panish and S. Sumski, “Ga-Al-As: Phase, Thermodynamic and Optical Properties,”J. Phys. Chem. Solids, 30, 129–137 (1969). (Experimental;*)CrossRefADSGoogle Scholar
  4. 70Ett:.
    M. Ettenberg and R.J. Paff, “Thermal Expansion of AlAs,”J. Appl. Phys., 41, 3926–3927 (1970). (Binary Systems; Experimental;#)CrossRefGoogle Scholar
  5. 70Hub:.
    D. Huber, “Calculation of III-V Ternary Phase Diagrams Ga-As-P and Ga-Al-As,”Proceedings International Conference Phys. and Chem. Semicond Heterojunctions andLayer Structures, Budapest, Hungary, 1, G. Szigeti, Ed., Akad. Kiado, Budapest, Hungary, 195–202 (1971). (Theory)Google Scholar
  6. 71Mir:.
    Ya.A. Mirtskhulava, V.V. Rakov, B.D. Lainer, M.G. Mil'vidskii, and L.G. Sakvarelidze, “Phase Equilibrium in the Gallium Arsenide-Aluminium Arsenide System,”Russ. J. Phys. Chem., 45, 9 (1971). (Experimental;#)Google Scholar
  7. 72Fis:.
    P. Fischer, W. Schmid, H.G. Brühl and G. Kühn, “ latin stants of Al0.8 Ga0.2 As between 110°C and 90°C,”Kristall Tech, 71 3, K5-K7 (1972). (Experimental)CrossRefGoogle Scholar
  8. 72Fos:.
    L.M. Foster, J.E. Scardcfield, and J.F. Woods, “Thermodyname Analysis of the III-V Alloy Semi-Conductor Phase Diagrams. III The Solidus Boundary in the Ga1-xAlxAs Pseudobinary System,”.J. Electrochem. Soc, 119, 765–766(1972). (Experimental;#)CrossRefGoogle Scholar
  9. 72Rad:.
    W.G. Rado, W.J.J. Johnson, and R.L. Crawley, “The Composition of Ga1-xAlxAs Grown from Ga-rich Solutions as a Function of Growth Temperature and Solution Composition,”.J. Electrochem. Soc, 119, 652–653 (1972). (Experimental;#)CrossRefGoogle Scholar
  10. 74Leo:.
    A. Leonhardt, K. Buchheiser, and G. Kühn, “Phase Diagrams of Semiconducting Compounds (III). Thermodynamic Calculation of the Ternary Melting Diagram of Ga-Al-As,”Kristall Tech., 9, 197–203 (1974). (Theory;#)CrossRefGoogle Scholar
  11. 74Min:.
    H.T. Minden, R. Premo, and C.V. Collins, “The Effect of Germanium on the Distribution Coefficient of Aluminium in the System Solid AlxGa11-xAs Liquid Ga-Al-As-Ge,”J. Cryst. Growth, 27, 316–319(1974). (Experimental;#)ADSGoogle Scholar
  12. 75Dru:.
    L.V. Druzhinina, V.T. Bublik, L.M. Dolginov, P.G. Eliseev, M.P. Kerbelev, V.B. Osvenskii, I.Z. Pinsker, and M.G. Shumskii, “Crystal Defects of Heterostructures of AlAs-GaAs Solid, Solutions and Effect on the Characteristics of Injection Lasers,”Sow Phvs. Tech, Phys., 19(7), 935–939 (1975); TR:Zh. Tekh. Fiz., 44, 1499-1506 (1974). (Experimental)Google Scholar
  13. 75Gon:.
    S. Gonda and H. Ijuin, “Liquid Phase Epitaxial Growth of AlxGa1-xAs. -I. Calculation of Phase Diagram and Crystal Growth Process,Bull. Electrotech. Lab., 39, 490–504 (1975) in Japanese. (Theory)Google Scholar
  14. 75Gro:.
    GaAs Liquid Epitaxial Group, “Phase Diagram of the Ternary System Ga-Al-As,” Wu Li Hsueh Pao, Peking,24, 244–251 (1975). (Experimental)Google Scholar
  15. 75Nak:.
    K. Nakajima, K Osamura, and Y. Murakami, “Phase Diagram of the Al-Ga-In-As Pseudobinary System,”J. Electrochem. Soc., State ScL Techn., 122, 1245–1248 (1975). (Experimental)Google Scholar
  16. 75Khu:.
    D.V. Khuber, “Theory of n-Component Alloys with Participation of A B Compounds. Calculation of liquidus and Solidus Curves of Mixed Semiconductors. Calculation of Al-Ga-As, Al-Ga-P, Si-Ge-Au and Si-Ge-Al Ternary Phase Diagrams,”Growth and Synthesis of Semiconducting Crystals and Films, Chapter 2, 212-218 (1975) in Russian. (Theory)Google Scholar
  17. 76Est:.
    E. Estrop, A. Izrael, and M. Sauvage, “Double-Crystal Spectrometer Measurement of Lattice Parameters and X-Ray Topography on Hetero-Junctions GaAs-AlxGa1-x]As,”Acta Crystallogr, A. 32, 627–630(1976).CrossRefADSGoogle Scholar
  18. 76Mus:.
    L. Muszynski and N.C. Riabcev, “ANew Method for the Determination of Liquidus Surfaces in Ternary Phase Diagrams of Ga-As-P, Ga-In-As, Ga-Al-As and Ga-Al-Sb,”J. Cryst. Growth, 36, 335–341 (1976). (Theory)CrossRefADSGoogle Scholar
  19. 77May:.
    L. Mayet, B. Montegu, and M. Gavand, “New Vertical Rotating LPE Reactor,”J. Cryst. Growth, 39, 362(1977).(Experimental;#)CrossRefADSGoogle Scholar
  20. 77Mir:.
    A.A. Mirtskhulava and L.G. Sakvarelidze, “Phase Equilibria in the Gallium-Indium-Arsenide and Gallium-Arsenide-Aluminium Arsenide Systems,”Russ, J. Phys. Chem., 51(2), 302–304 (1977). (Experimental)Google Scholar
  21. 77Pis:.
    M. Piskorsky and Z. Muszynski, “Significance of GaAs Solubility in Ga-Al in Multilayer LPE of AlxGa1-xAs,”Electron Technol, 10(3), 27–34 (1977). (Experimental;#)Google Scholar
  22. 78Dav:.
    O.I. Davarashvili, Z.S. Kachlishvili, I.V Krialashvili, E.I. Manafly, Yu G. Pukhov, N.G. Ryabtsev, R.A. Charmakadze, R.I. Chikovani, and A.P. Shotov, “Simple Method for Studying Phase Diagrams of Semi-Conductor Systems,” Tbilisis Universitetic Shromebi, Tr. Tbilis, Un-ta,203, 95–107 (1978). (Theory)Google Scholar
  23. 79Iso:.
    S. Isozumi, Y. Komatsu, and T. Kotani, “Ga1-xAlxAs LPE Growth: Composition Control and Growth Rate Analysis,”Fujitsu Sci. Tech.J., 15(2), 85–107(1979). (Experimental)Google Scholar
  24. 79Kup:.
    E. Kuphal and H.W. Dinges, “Composition and Refractive Index of Ga1-xAlx As Determined by Ellipsometery,”J. Appl. Phys., 50, 4196–4200 (1979). (Experimental)CrossRefADSGoogle Scholar
  25. *82Dut:.
    D. Dutartre, M. Gavant, L. Mayet, A. Laugier, and I. Ansara, “The Effect of Ge on the Liquidus and Solidus in the System AlAsGa: Ge,”Journal of Physique, Collogue, C5(12), 39–46(1982). (Experimental;#)Google Scholar
  26. *84Ans:.
    I. Ansara and D. Durartre, “Thermodynamic Study of the Al-Ga-As-Ge System,“Calphad, 8, 323–342 (1984). (Theory;#)CrossRefGoogle Scholar
  27. 84Mca:.
    A.J. McAllister, “The Al-As (Aluminum-Arsenic) System,”Bull. Alloy Phase Diagrams, 5(6), 577–579 (1984). (Review;#)CrossRefMathSciNetGoogle Scholar
  28. 84Shi:.
    Z. Shi and Q. Zhou, “Comparison of Two Solution Models (QRS and QCA) in Solid-liquid Equilibrium Calculation of the Ga-Al-As System,”Xiyou Jinshu, 3, 98–105 (1984) in Chinese. (Theory)Google Scholar
  29. 85Jia:.
    X. Jiang, “Calculation of the Ga-Al-As Ternary Phase Diagram and its Application,”Xijou Jinshu, 4, 35–41 (1985) in Chinese. (Theory)Google Scholar
  30. 87Pee:.
    N.S. Peev, “Liquid-Phase Epitaxy of AlGaAs. I. Solubility in the System Al-Ga-As,”Bulg. J. Phys., 14(2), 176–181 (1987). (Experimental;#)Google Scholar
  31. 88Ned:.
    N.K. Nedev and D.A. Minkov, “ANew Approach for Determining the Liquidus and Solidus Isotherms of the Systems AIII-BIII-CV ”,J. Cryst. Growth, 88, 429–434(1988).CrossRefADSGoogle Scholar

Copyright information

© ASM International 1992

Authors and Affiliations

  • I. Ansara
    • 1
  1. 1.Laboratoire de Thermodynamique et Physico-Chimie MétallurgiquesFrance

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