Journal of Electronic Materials

, Volume 25, Issue 2, pp 201–205

Metal-semiconductor contacts to n-ZnS0.07Se0.93

  • Albert Wang
  • Wayne A. Anderson

DOI: 10.1007/BF02666244

Cite this article as:
Wang, A. & Anderson, W.A. JEM (1996) 25: 201. doi:10.1007/BF02666244


A systematic study was conducted on electrical properties of metal-semiconductor contacts to n-ZnS0.07Se0.93 with metals of different metal work functions. A clear relation was found between the Schottky barrier height and the metal work function although the Schottky contact theory could not predict it accurately. Thermionic-emission was found to be the dominant current transport mechanism. A significant Schottky barrier height improvement was achieved by means of a cryogenic process technique for forming the Au/n-ZnS0.07Se0.93 contact. A thermal stability study was also conducted on Pd and Au/n-ZnS0.07Se0.93 contacts. Thermal annealing tests showed a stable electrical property up to T = 250°C for the Pd contact and T = 150°C for the Au contact, however, a dramatic degradation was observed after higher temperature annealing and this is attributed to the interaction between metals and ZnSSe after annealing as supported by Auger electron spectroscopy.

Key words

II-VI semiconductors Schottky contacts stability 

Copyright information

© The Metallurgical of Society of AIME 1996

Authors and Affiliations

  • Albert Wang
    • 1
  • Wayne A. Anderson
    • 1
  1. 1.Department of Electrical & Computer Engineering, Center for Electronic & Electro-Optic MaterialsState University of New York at BuffaloBonner Hall, Amherst

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