Journal of Electronic Materials

, Volume 20, Issue 8, pp 509–516 | Cite as

Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AIGaAs by high-pressure photoluminescence

  • V. A. Wilkinson
  • A. D. Prins
  • D. J. Dunstan
  • L. K. Howard
  • M. T. Emeny
Article

Abstract

InxGa1-xAs quantum wells grown pseudomorphically in GaAs and AlGaAs with values ofx up to 0.25 have been studied by photoluminescence under high hydrostatic pressure. We concentrate here on the pressure range where the emissions quench and take on the characteristics of theX-minima. In the InGaAs/GaAs structures, these transitions display an unexpected pressure coefficient, -2.6 meV/kbar, twice that of theX minima in GaAs. We assign these transitions to theX minima in the wells, and therefore make a direct measurement of the strainedX positions as a function of composition. In the InGaAs/AIGaAs structures the crossovers occur against theX-minima in the barriers and these crossovers yield an accurate value for the band offset ratio for InGaAs/GaAs heterojunctions which is found to be 60:40 (CB:VB).

Key words

InGaAs/GaAs band offsets high-pressure photoluminescence 

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Copyright information

© The Mineral,Metal & Materials Society,Inc. 1991

Authors and Affiliations

  • V. A. Wilkinson
    • 1
  • A. D. Prins
    • 1
    • 3
  • D. J. Dunstan
    • 1
    • 3
  • L. K. Howard
    • 1
  • M. T. Emeny
    • 2
  1. 1.Strained-Layer Structures Research GroupUniversity of Surrey GuildfordSurreyUK
  2. 2.Royal Signals and Radar EstablishmentMalvernUK
  3. 3.Department of PhysicsUniversity of SurreyUK

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