Journal of Electronic Materials

, Volume 20, Issue 8, pp 509–516 | Cite as

Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AIGaAs by high-pressure photoluminescence

  • V. A. Wilkinson
  • A. D. Prins
  • D. J. Dunstan
  • L. K. Howard
  • M. T. Emeny


InxGa1-xAs quantum wells grown pseudomorphically in GaAs and AlGaAs with values ofx up to 0.25 have been studied by photoluminescence under high hydrostatic pressure. We concentrate here on the pressure range where the emissions quench and take on the characteristics of theX-minima. In the InGaAs/GaAs structures, these transitions display an unexpected pressure coefficient, -2.6 meV/kbar, twice that of theX minima in GaAs. We assign these transitions to theX minima in the wells, and therefore make a direct measurement of the strainedX positions as a function of composition. In the InGaAs/AIGaAs structures the crossovers occur against theX-minima in the barriers and these crossovers yield an accurate value for the band offset ratio for InGaAs/GaAs heterojunctions which is found to be 60:40 (CB:VB).

Key words

InGaAs/GaAs band offsets high-pressure photoluminescence 


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  1. 1.
    See, for example, J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27,118 (1974), J. Cryst. Growth29, 273; (1975), J. Cryst. Growth32, 265 (1976) and R. People and J. C. Bean Appl. Phys. Lett.47, 322 (1985).Google Scholar
  2. 2.
    R. H. Dixon and P. J. Goodhew, J. Appl. Phys.68, 3163 (1990).CrossRefGoogle Scholar
  3. 3.
    G. C. Osbourn, J. Vac. Sci. Technol.B2, 176 (1984).Google Scholar
  4. 4.
    E. P. O'Reilly and G. P. Witchlow, Phys. Rev.B34, 6030 (1986).Google Scholar
  5. 5.
    W. Paul and D. M. Warschauer, Solids Under Pressure (McGraw-Hill, New York, 1963), Chap. 8, p. 226.Google Scholar
  6. 6.
    D. J. Wolford, T. F. Keuch, J. A. Bradley, M. A. Gell, D. Ninno and M. Jaros, J. Vac. Sci. Technol.B4, 1043 (1986).Google Scholar
  7. 7.
    U. Venkateswaren, M. Chandrasekar, H. R. Chandrasekar, B. A. Vojak, F. A. Chambers and J. M. Meese, Phys. Rev.B33, 8416 (1986).Google Scholar
  8. 8.
    R. Dingle, W. Weigmann and C. H. Henry, Phys. Rev. Lett.33, 827 (1974).CrossRefGoogle Scholar
  9. 9.
    T. G. Andersson, Z. G. Chen, V. D. Kulakovskii, A. Uddin and J. T. Vallin, Phys. Rev.B37, 4032 (1988).Google Scholar
  10. 10.
    J. P. Reithmaier, R. Hoger, H. Reichert, A. Heberle, G. Abstreiter and G. Weimann, Appl. Phys. Lett.56, 536 (1990).CrossRefGoogle Scholar
  11. 11.
    H. Q. Hou, Y. Segawa, Y. Aoyagi, S. Namba and J. M. Zhou, Solid State Commun.74, 159 (1990).CrossRefGoogle Scholar
  12. 12.
    L. Wang, H. Hou, J. Zhou, R. Tang, Z. Lu, Y. Wang and Q. Huang, Chinese Phys. Lett.6, 76 (1989).Google Scholar
  13. 13.
    H. Q. Hou, L. T. Wang, R. M. Tang, J. M. Zhou, Phys. Rev.B42, 2926 (1990).Google Scholar
  14. 14.
    D. J. Dunstan and W. Scherrer, Rev. Sci. Instr.59, 627 (1987).CrossRefGoogle Scholar
  15. 15.
    D. J. Wolford and J. A. Bradley, Solid State Commun.53, 1069 (1985).CrossRefGoogle Scholar
  16. 16.
    J. D. Lambkin and D. J. Dunstan, Solid State Commun.67, 827 (1988).CrossRefGoogle Scholar
  17. 17.
    V. A. Wilkinson, A. D. Prins, J. D. Lambkin, E. P. O'Reilly, D. J. Dunstan, L. K. Howard and M. T. Emeny, Phys. Rev.B42, 3113 (1990).Google Scholar
  18. 18.
    J. D. Lambkin, A. R. Adams, D. J. Dunstan, P. Dawson and C. T. Foxon, Phys. Rev.B39, 5546, and references therein (1989).Google Scholar
  19. 19.
    J. R. Chelkowsky and M. L. Cohen, Phys. Rev.B14,556 (1976).Google Scholar
  20. 20.
    C. G. Van de Walle, Phys. Rev.B39, 1871 (1989).Google Scholar
  21. 21.
    J. D. Lambkin,D. J.Dunstan and E. P.O'Reilly, J. Cryst Growth 93, 322 (1988).CrossRefGoogle Scholar
  22. 22.
    V. A. Wilkinson, J. D. Lambkin, A. D. Prins and D. J. Dunstan, High Pressure Research 3, 57 (1990).CrossRefGoogle Scholar
  23. 23.
    M. J. Joyce, M. J. Johnson, M. Gal and B. F. Usher, Phys. Rev.B38, 10978 (1988).Google Scholar
  24. 24.
    M. Chandrasekhar and F. H. Pollak, Phys. Rev.B15, 2127 (1977).Google Scholar
  25. 25.
    J. Y. Marzin, M. N. Charasse and B. Sermage, Phys. Rev.B31, 8298 (1985).Google Scholar
  26. 26.
    G. Ji, D. Huang, U. K. Reddy, T. S. Henderson, R. Houdre and H. Morkoc, J. Appl. Phys.62, 3366 (1987).CrossRefGoogle Scholar

Copyright information

© The Mineral,Metal & Materials Society,Inc. 1991

Authors and Affiliations

  • V. A. Wilkinson
    • 1
  • A. D. Prins
    • 1
    • 3
  • D. J. Dunstan
    • 1
    • 3
  • L. K. Howard
    • 1
  • M. T. Emeny
    • 2
  1. 1.Strained-Layer Structures Research GroupUniversity of Surrey GuildfordSurreyUK
  2. 2.Royal Signals and Radar EstablishmentMalvernUK
  3. 3.Department of PhysicsUniversity of SurreyUK

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