Journal of Electronic Materials

, Volume 20, Issue 7, pp 869–874 | Cite as

Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition

  • Y. C. Wang
  • R. F. Davis
Article
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Abstract

Monocrystalline 6H-SiC thin films have been epitaxially grown on off-axis 6H-SiC {0001} substrates in the temperature range of 1623–1873 K via chemical vapor deposition. The growth rate was a strong function of the growth temperature and the reactant gas concentration. The activation energies for growth were 64 kJ/mole and 55 kJ/mole for the (0001) Si face and the (0001) C face, respectively. The concentration of growth pits in the films increased as a function of decreasing deposition temperature, increasing concentration of reactant gases and increasing off-axis orientation. Beta-SiC islands were also observed in the epilayers when the (SiH4 + C2H4)/H2 ratio was ≥2.5:3000.

Key words

α(6H)-SiC thin film CVD growth rate surface microstructure 
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Copyright information

© The Mineral,Metal & Materials Society,Inc. 1991

Authors and Affiliations

  • Y. C. Wang
    • 1
  • R. F. Davis
    • 1
  1. 1.Department of Materials Science and EngineeringNorth Carolina State UniversityRaleigh

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