The role of complementary species in P/Be and Ar/Be Co-implanted InP
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Chemical and damage effects are used to explain the influence of complementary species on the activation of co-implanted InP. Recently Raoet al. have shown that the damage is the effective mechanism of enhancing activation efficiency and preventing in-diffusion in the P/Be and Ar/Be co-implanted InP. We have confirmed the results and further examined the role of the complementary species by varying their doses. Activation efficiencies as high as 75% and 69.5% were observed in the P/Be and Ar/Be co-implantation, respectively, which can be compared with 31.7% activation in the Be single implantation. Both activation efficiency and in-diffusion decreased as doses of P and Ar increased, that is, as the amount of damage increased. P/Be had always higher activation efficiency than that of Ar/Be when the doses of co-implants are equal. The ratio of the difference in the two activation efficiencies to that of P/Be was the largest at 1014 cm−2 of co-implant dose. This behavior was attributed to the chemical effect of the co-implanted P. Photoluminescence results near the band edge showed that the intensity of the main peaks of Be single implantation decreased with increasing P and Ar doses.
Key wordsInP co-implantation chemical effect stoichiometry damage effect Hall measurement photoluminescence
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- 1.S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York (1981).Google Scholar
- 2.V. Swaminathan and A. T. Macrander, Material Aspects of GaAs and InP Based Materials, Prentice Hall, New Jersey (1991).Google Scholar
- 5.B. L. Sharma, Solid State Tech. Nov., 113 (1989).Google Scholar
- 11.J. F. Ziegler, J. P. Biersack and U. Littmark, The Stopping and Ranges of Ions in Matter, vol. 1, Pergamon, New York (1985).Google Scholar
- 14.N. Moris and B. J. Sealy, Inst. Phys. Conf. Ser. No. 91, Ch. 2, 145 (1987).Google Scholar
- 17.R. G. Wilson, S. W. Novak and J. M. Zavada, Inst. Phys. Conf. Ser. no. 91, 479 (1988).Google Scholar
- 19.P. Karighattam and D. A. Thompson, InP and Related Ma- terials for Adv. Electron, and Optical Dev., SPIE Vol. 1144, 329 (1989).Google Scholar
- 20.H. Tempkin and V. V. Dutt, Mat. Res. Soc. Symp. Proc.14, 253 (1983).Google Scholar