Journal of Electronic Materials

, Volume 21, Issue 3, pp 361–366 | Cite as

Evaluation of Zn{N[Si(CH3)3]2}2 as ap-type dopant in OMVPE growth of ZnSe

  • W. S. Rees
  • D. M. Green
  • T. J. Anderson
  • E. Bretschneider
  • B. Pathangey
  • C. Park
  • J. Kim
Article

Abstract

We have grown nominally undoped ZnSe on GaAs from the precursors H2Se and Et2Zn. Replacement of Et2Zn by Zn[N(TMS)2]2 produced crystalline ZnSe of a lesser quality. Data indicate incorporation of nitrogen into the films when Et2Zn is utilized as the main zinc source with Zn[N(TMS)2]2 being introduced at dopant levels. Characterization techniques employed include NMR, XRD, SIMS, SEM, PL, RGA, GC/MS, and Raman spectroscopy.

Key words

ZnSe OMVPE Raman spectroscopy nitrogen doping 

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Copyright information

© TMS 1992

Authors and Affiliations

  • W. S. Rees
    • 1
  • D. M. Green
    • 1
  • T. J. Anderson
    • 2
  • E. Bretschneider
    • 2
  • B. Pathangey
    • 2
  • C. Park
    • 2
  • J. Kim
    • 2
  1. 1.Department of Chemistry and Materials Research and Technology CenterThe Florida State UniversityTallahassee
  2. 2.Department of Chemical EngineeringUniversity of FloridaGainesville

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